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The optimal choice of the doping levels in an inline selective emitter design for screen printed multicrystalline silicon solar cells

The optimal choice of the doping levels in an inline selective emitter design for screen printed multicrystalline silicon solar cells

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LAUERMANN, Thomas, Felix BOOK, Amir DASTGHEIB-SHIRAZI, Giso HAHN, Helge HAVERKAMP, Robert BLEIDIESSEL, Martin FLEUSTER, 2009. The optimal choice of the doping levels in an inline selective emitter design for screen printed multicrystalline silicon solar cells. In: Proceedings of the 24th European PV SEC, Hamburg, 21 - 25 September 2009

@inproceedings{Lauermann2009optim-920, title={The optimal choice of the doping levels in an inline selective emitter design for screen printed multicrystalline silicon solar cells}, year={2009}, booktitle={Proceedings of the 24th European PV SEC, Hamburg, 21 - 25 September 2009}, author={Lauermann, Thomas and Book, Felix and Dastgheib-Shirazi, Amir and Hahn, Giso and Haverkamp, Helge and Bleidiessel, Robert and Fleuster, Martin} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/920"> <dc:contributor>Book, Felix</dc:contributor> <dc:contributor>Haverkamp, Helge</dc:contributor> <dc:creator>Fleuster, Martin</dc:creator> <dc:creator>Lauermann, Thomas</dc:creator> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/920"/> <dc:creator>Hahn, Giso</dc:creator> <dcterms:issued>2009</dcterms:issued> <dc:rights>deposit-license</dc:rights> <dc:creator>Haverkamp, Helge</dc:creator> <dcterms:abstract xml:lang="eng">A selective emitter from a single diffusion process has been applied to screen printed multicrystalline silicon solar cells. The influence of different dopant concentrations in the highly doped regions intended for metallisation and alignment tolerances has been investigated. It was found that the gain reached by increasing the dopant concentration and thereby lowering the specific contact resistance of the emitter electrode can be outweighed by the loss in the short circuit current density (JSC) caused by an increased recombination at the front surface and in the emitter. Therefore the process parameters have to be chosen carefully. The open circuit voltage (VOC) was found to be nearly independent of the initial doping level.</dcterms:abstract> <dc:contributor>Lauermann, Thomas</dc:contributor> <dcterms:bibliographicCitation>Publ. in: Proceedings of the 24th European PV SEC, Hamburg, 21-25 September 2009</dcterms:bibliographicCitation> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:52:03Z</dc:date> <dc:contributor>Bleidiessel, Robert</dc:contributor> <dc:contributor>Hahn, Giso</dc:contributor> <dc:contributor>Dastgheib-Shirazi, Amir</dc:contributor> <dc:contributor>Fleuster, Martin</dc:contributor> <dc:creator>Dastgheib-Shirazi, Amir</dc:creator> <dcterms:rights rdf:resource="http://nbn-resolving.org/urn:nbn:de:bsz:352-20140905103416863-3868037-7"/> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:52:03Z</dcterms:available> <dcterms:title>The optimal choice of the doping levels in an inline selective emitter design for screen printed multicrystalline silicon solar cells</dcterms:title> <dc:creator>Bleidiessel, Robert</dc:creator> <dc:creator>Book, Felix</dc:creator> <dc:language>eng</dc:language> </rdf:Description> </rdf:RDF>

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