Laser assisted particle removal from Silicon wafers


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MOSBACHER, Mario, Hans-Joachim MÜNZER, Micha BERTSCH, Volker DOBLER, Nouari CHAOUI, Jan Philip SIEGEL, Roland OLTRA, Dieter BÄUERLE, Johannes BONEBERG, Paul LEIDERER, 2001. Laser assisted particle removal from Silicon wafers. In: MITTAL, K. L., ed.. Particles on Surfaces by K L Mittal, publ by Plenum Publ, accepted as a chapter, 2001. 6. Plenum Publ.

@incollection{Mosbacher2001Laser-9185, title={Laser assisted particle removal from Silicon wafers}, year={2001}, edition={6}, publisher={Plenum Publ.}, booktitle={Particles on Surfaces by K L Mittal, publ by Plenum Publ, accepted as a chapter, 2001}, editor={Mittal, K. L.}, author={Mosbacher, Mario and Münzer, Hans-Joachim and Bertsch, Micha and Dobler, Volker and Chaoui, Nouari and Siegel, Jan Philip and Oltra, Roland and Bäuerle, Dieter and Boneberg, Johannes and Leiderer, Paul} }

Münzer, Hans-Joachim Oltra, Roland Boneberg, Johannes Chaoui, Nouari 2011-03-24T17:54:21Z Bäuerle, Dieter Dobler, Volker First publ. in: Particles on Surfaces 6, ed. by K. L. Mittal, publ. by Plenum Publ., accepted as a chapter, 2001 We have studied the removal of submicrometer particles from silicon wafers by the steam laser cleaning (SLC) and dry laser cleaning (DLC) processes. These processes are currently being investigated as new promising cleaning technologies for complementing traditional methods in industrial applications. For SLC a thin liquid layer (e.g. a water-alcohol mixture) is condensed onto the substrate, and is subsequently evaporated by irradiating the surface with a short laser pulse. The DLC process, on the other hand, relies only on the laser pulse, without application of a vapor jet. Using well-characterized monodisperse polystyrene and silica particles as well as irregularly shaped alumina particles with diameters down to 60nm we have systematically investigated the efficiency of the two processes. The influence of laser pulse duration from the nanosecond to the femtosecond range was studied. For the DLC we were able to measure the acceleration of the silicon surface due to thermal expansion for DLC. Our results demonstrate that for the gentle cleaning of silicon wafers the SLC is a very efficient method and for particles smaller in diameter than 400nm it is superior to DLC. This is due to lower cleaning thresholds in laser fluence for SLC compared to DLC for the removal of small particles. DLC may cause serious surface damage by field enhancement under the contaminants, an effect that has<br />only rarely been taken into account in laser cleaning studies so far and is also discussed here. application/pdf Münzer, Hans-Joachim Chaoui, Nouari Siegel, Jan Philip Dobler, Volker Oltra, Roland Leiderer, Paul Mosbacher, Mario 2001 terms-of-use Boneberg, Johannes 2011-03-24T17:54:21Z Bertsch, Micha Leiderer, Paul Siegel, Jan Philip eng Mosbacher, Mario Bäuerle, Dieter Bertsch, Micha Laser assisted particle removal from Silicon wafers

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