Investigation of field, carrier, and coherent phonon dynamics in low-temperature grown GaAs

Dekorsy, Thomas; Kurz, Heinrich; Zhou, X. Q.; Ploog, Klaus

Investigation of field, carrier, and coherent phonon dynamics in low-temperature grown GaAs

Files

Investigation_of_field_carrier_and_coherent_phonon_dynamics_in_low_temperature_grown_GaAs.pdf(391.2 KB)

Date

1993

Authors

Dekorsy, Thomas

Kurz, Heinrich

Zhou, X. Q.

Ploog, Klaus

Publication type

Journal article

Published in

Applied Physics Letters ; 63 (1993), 21. - pp. 2899-2901

Abstract

We compare the dynamics of electric field, transport, and coherent phonons in as-grown and annealed low-temperature (LT) GaAs by an electro-optic technique on a subpicosecond time scale. The buildup and decay of space-charge fields associated with the photo-Dember effect are investigated. The recombination dynamics of trapped carriers is monitored via the ps decay of the electro-optic signal. Differences in annealed and as-grown LT GaAs are related to the different microscopic form of excess arsenic and point defect density. In the coherent phonon signal a large red shift of the LO phonon and an additional local vibration below the LO phonon provides information on structural defects in as-grown LT GaAs. Applied Physics Letters is copyrighted by The American Institute of Physics.

Subject (DDC)

530 Physics

Cite This

ISO 690

DEKORSY, Thomas, Heinrich KURZ, X. Q. ZHOU, Klaus PLOOG, 1993. Investigation of field, carrier, and coherent phonon dynamics in low-temperature grown GaAs. In: Applied Physics Letters. 63(21), pp. 2899-2901. Available under: doi: 10.1063/1.110291

BibTex

@article{Dekorsy1993Inves-9108,
  year={1993},
  doi={10.1063/1.110291},
  title={Investigation of field, carrier, and coherent phonon dynamics in low-temperature grown GaAs},
  number={21},
  volume={63},
  journal={Applied Physics Letters},
  pages={2899--2901},
  author={Dekorsy, Thomas and Kurz, Heinrich and Zhou, X. Q. and Ploog, Klaus}
}

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