Dynamics of the solidification of laser-annealed Si thin films

Type of Publication: Journal article
URI (citable link): http://nbn-resolving.de/urn:nbn:de:bsz:352-opus-30616
Author: Boneberg, Johannes; Nedelcu, Johann; Bender, Hubert; Leiderer, Paul
Year of publication: 1993
Published in: Materials Science and Engineering / A ; 173 (1993), 1-2. - pp. 347-350
DOI (citable link): https://dx.doi.org/10.1016/0921-5093(93)90242-7
Summary:
Nanosccond time-resolved reflectivity and transmission measurements are used for the observation of solidification phenomena, following incomplete or complete melting of thin Si films (d = 125 nm) by nanosecond laser pulses. Solidification is observed to proceed at the liquid-solid interface as long as the film is not melted completely. On complete melting of the film, nucleation in the liquid becomes important. Heat conduction into the quartz substrate rapidly cools the liquid, until after several tens of nanoseconds homogeneous nucleation of crystalline Si occurs at temperatures around 500 K below the melting point of Si. At even larger supercoolings our measurements indicate the transient formation of amorphous Si in addition to the formation of the crystalline phase.
Subject (DDC): 530 Physics
Link to License: Attribution-NonCommercial-NoDerivs 2.0 Generic

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BONEBERG, Johannes, Johann NEDELCU, Hubert BENDER, Paul LEIDERER, 1993. Dynamics of the solidification of laser-annealed Si thin films. In: Materials Science and Engineering / A. 173(1-2), pp. 347-350. Available under: doi: 10.1016/0921-5093(93)90242-7

@article{Boneberg1993Dynam-9101, title={Dynamics of the solidification of laser-annealed Si thin films}, year={1993}, doi={10.1016/0921-5093(93)90242-7}, number={1-2}, volume={173}, journal={Materials Science and Engineering / A}, pages={347--350}, author={Boneberg, Johannes and Nedelcu, Johann and Bender, Hubert and Leiderer, Paul} }

<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/9101"> <dc:creator>Bender, Hubert</dc:creator> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/2.0/"/> <dc:creator>Leiderer, Paul</dc:creator> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/9101/1/142_matsciengin_1993.pdf"/> <dc:creator>Nedelcu, Johann</dc:creator> <dc:language>eng</dc:language> <dc:contributor>Nedelcu, Johann</dc:contributor> <dcterms:issued>1993</dcterms:issued> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/9101"/> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:format>application/pdf</dc:format> <dcterms:title>Dynamics of the solidification of laser-annealed Si thin films</dcterms:title> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:53:37Z</dcterms:available> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/9101/1/142_matsciengin_1993.pdf"/> <dc:contributor>Bender, Hubert</dc:contributor> <dc:rights>Attribution-NonCommercial-NoDerivs 2.0 Generic</dc:rights> <dc:contributor>Boneberg, Johannes</dc:contributor> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:53:37Z</dc:date> <dcterms:bibliographicCitation>First publ. in: Materials Science and Engineering / A, 173 (1993), 1-2, pp. 347-350</dcterms:bibliographicCitation> <dcterms:abstract xml:lang="eng">Nanosccond time-resolved reflectivity and transmission measurements are used for the observation of solidification phenomena, following incomplete or complete melting of thin Si films (d = 125 nm) by nanosecond laser pulses. Solidification is observed to proceed at the liquid-solid interface as long as the film is not melted completely. On complete melting of the film, nucleation in the liquid becomes important. Heat conduction into the quartz substrate rapidly cools the liquid, until after several tens of nanoseconds homogeneous nucleation of crystalline Si occurs at temperatures around 500 K below the melting point of Si. At even larger supercoolings our measurements indicate the transient formation of amorphous Si in addition to the formation of the crystalline phase.</dcterms:abstract> <dc:creator>Boneberg, Johannes</dc:creator> <dc:contributor>Leiderer, Paul</dc:contributor> </rdf:Description> </rdf:RDF>

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