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Thermal stability of PECVD a-Si<sub>1-x</sub>C<sub>x</sub> layers for crystalline silicon solar cell passivation

Thermal stability of PECVD a-Si1-xCx layers for crystalline silicon solar cell passivation

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Prüfsumme: MD5:34c2e752bc52cdffc10f62e2f4b99728

RIEGEL, Stefanie, Bernd RAABE, Michael P. STEWART, Hemant MUNGEKAR, Peter BORDEN, Barbara TERHEIDEN, Giso HAHN, 2009. Thermal stability of PECVD a-Si1-xCx layers for crystalline silicon solar cell passivation. 24th European Photovoltaic Solar Energy. Hamburg, 21. Sep 2009 - 25. Sep 2009. In: Proceedings of the 24th European Photovoltaic Solar Energy Conference. München:WIP - Wirtschaft und Infrastruktur, pp. 1591-1595. ISBN 3-936338-25-6. Available under: doi: 10.4229/24thEUPVSEC2009-2CV.2.49

@inproceedings{Riegel2009Therm-908, title={Thermal stability of PECVD a-Si1-xCx layers for crystalline silicon solar cell passivation}, year={2009}, doi={10.4229/24thEUPVSEC2009-2CV.2.49}, isbn={3-936338-25-6}, address={München}, publisher={WIP - Wirtschaft und Infrastruktur}, booktitle={Proceedings of the 24th European Photovoltaic Solar Energy Conference}, pages={1591--1595}, author={Riegel, Stefanie and Raabe, Bernd and Stewart, Michael P. and Mungekar, Hemant and Borden, Peter and Terheiden, Barbara and Hahn, Giso} }

Riegel, Stefanie Borden, Peter We investigate the thermal stability of the surface passivation of PECVD a-Si1-xCx layers on symmetrical lifetime samples. To study the influence of thermal treatment on the passivation quality, lifetime measurements on symmetrical samples using the quasi transient technique and the quasi steady state technique are performed. The samples are exposed to temperatures up to 600°C. The annealing steps of ten minutes are carried out in H-plasma and N2 ambient and annealing is done cumulatively. After each temperature step effective lifetime and FTIR measurements are performed. Maximum effective lifetimes of 1.2 ms and 1.7 ms are obtained after annealing at 550°C in hydrogen atmosphere generated by a remote H-plasma and N2 ambient, respectively. In the FTIR spectra a reduction of the SiH peak intensity at 2060 cm-1 is observed. The intensity of the other SiH peaks does not change significantly during annealing. Stewart, Michael P. Hahn, Giso Raabe, Bernd Raabe, Bernd 2011-03-22T17:51:51Z Thermal stability of PECVD a-Si<sub>1-x</sub>C<sub>x</sub> layers for crystalline silicon solar cell passivation Mungekar, Hemant Terheiden, Barbara Terheiden, Barbara Borden, Peter terms-of-use eng 2011-03-22T17:51:51Z Mungekar, Hemant Stewart, Michael P. Riegel, Stefanie Hahn, Giso 2009 First publ. in: Proceedings of the 24th European Photovoltaic Solar Energy Conference, September 2009, Hamburg. München : WIP - Wirtschaft und Infrastruktur, 2009, pp. 1591-1595

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