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Imaging of dopants in surface and sub-surface layers of the transition metal dichalcogenides WS2 and WSe2 by scanning tunneling microscopy

Imaging of dopants in surface and sub-surface layers of the transition metal dichalcogenides WS2 and WSe2 by scanning tunneling microscopy

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MATTHES, Thomas W., Christof SOMMERHALTER, Armin RETTENBERGER, Patrik BRUKER, Johannes BONEBERG, Martha Christina LUX-STEINER, Paul LEIDERER, 1998. Imaging of dopants in surface and sub-surface layers of the transition metal dichalcogenides WS2 and WSe2 by scanning tunneling microscopy. In: Applied Physics / A, Materials Science and Processing. 66(Supplement 1), pp. S1007-S1011

@article{Matthes1998Imagi-9034, title={Imaging of dopants in surface and sub-surface layers of the transition metal dichalcogenides WS2 and WSe2 by scanning tunneling microscopy}, year={1998}, doi={10.1007/PL00022813}, number={Supplement 1}, volume={66}, journal={Applied Physics / A, Materials Science and Processing}, pages={S1007--S1011}, author={Matthes, Thomas W. and Sommerhalter, Christof and Rettenberger, Armin and Bruker, Patrik and Boneberg, Johannes and Lux-Steiner, Martha Christina and Leiderer, Paul} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/9034"> <dcterms:bibliographicCitation>First publ. in: Applied Physics / A, Materials Science and Processing, 66 (1998), Supplement 1, pp. S1007-S1011</dcterms:bibliographicCitation> <dcterms:title>Imaging of dopants in surface and sub-surface layers of the transition metal dichalcogenides WS2 and WSe2 by scanning tunneling microscopy</dcterms:title> <dc:creator>Rettenberger, Armin</dc:creator> <dc:creator>Matthes, Thomas W.</dc:creator> <dc:creator>Sommerhalter, Christof</dc:creator> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:53:02Z</dcterms:available> <dc:contributor>Matthes, Thomas W.</dc:contributor> <dc:creator>Lux-Steiner, Martha Christina</dc:creator> <dc:creator>Leiderer, Paul</dc:creator> <dc:contributor>Boneberg, Johannes</dc:contributor> <dc:contributor>Rettenberger, Armin</dc:contributor> <dc:contributor>Leiderer, Paul</dc:contributor> <dc:rights>deposit-license</dc:rights> <dc:contributor>Sommerhalter, Christof</dc:contributor> <dc:contributor>Lux-Steiner, Martha Christina</dc:contributor> <dc:contributor>Bruker, Patrik</dc:contributor> <dcterms:issued>1998</dcterms:issued> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:53:02Z</dc:date> <dc:format>application/pdf</dc:format> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/9034"/> <dc:creator>Bruker, Patrik</dc:creator> <dc:creator>Boneberg, Johannes</dc:creator> <dcterms:rights rdf:resource="https://creativecommons.org/licenses/by-nc-nd/2.0/legalcode"/> <dcterms:abstract xml:lang="eng">The van-der-Waals surfaces (0001) of the layered structure semiconductors WS2 and WSe2 are known to be free of intrinsic surface states. Therefore, they provide an ideal system for investigations of the influence of individual dopants on the local electronic properties, which can be measured by scanning tunneling microscopy (STM). Individual dopant sites were resolved as topographic depressions superimposed on the atomically resolved lattice. The apparent depth of these depressions showed a discrete statistical distribution and was attributed to the spatial depth of the dopant site. Using an STM-induced electrochemical process, we could locally expose the first and second sub-surface layer to correlate the previously recorded topographic contrast to the location of buried dopants. To our knowledge this is the first direct proof of the capability of STM to detect individual sub-surface dopants. An interpretation of the contrast mechanism is given in terms of tip-induced band-bending effects and current transport mechanisms involving minority charge carrier injection and majority charge carrier extraction.</dcterms:abstract> <dc:language>eng</dc:language> </rdf:Description> </rdf:RDF>

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