Extrinsic and intrinsic magnetoresistance contributions of CrO2 thin films
| Type of Publication: | Journal article |
| URI (citable link): | http://nbn-resolving.de/urn:nbn:de:bsz:352-opus-53271 |
| Author: | Rüdiger, Ulrich; Rabe, M.; Samm, K.; Özyilmaz, Barbaros; Pommer, Jens; Fraune, Michael; Güntherodt, Gernot; Senz, Stephan; Hesse, Dietrich |
| Year of publication: | 2001 |
| Published in: | Journal of Applied Physics ; 89 (2001), 11. - pp. 7699-7701 |
| DOI (citable link): | https://dx.doi.org/10.1063/1.1362658 |
| Summary: |
The growth of (010)-oriented CrO2 thin films on Al2O3(0001) substrates leads to a higher grain boundary density than the growth of (100)-oriented CrO2 thin films on isostructural TiO2(100) substrates. For both types of films an intrinsic linear contribution to the high field magnetoresistance (MR) due to spin disorder has been determined at T=300K. This contribution does not depend on the crystalline quality of the films and supports the suggested intrinsic double exchange mechanism for CrO2. At low temperature (T=10K) intergrain tunneling MR and Lorentz MR appear, which strongly depend on the crystalline properties of the CrO2 films.
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| Subject (DDC): | 530 Physics |
| Link to License: | Terms of use |
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RÜDIGER, Ulrich, M. RABE, K. SAMM, Barbaros ÖZYILMAZ, Jens POMMER, Michael FRAUNE, Gernot GÜNTHERODT, Stephan SENZ, Dietrich HESSE, 2001. Extrinsic and intrinsic magnetoresistance contributions of CrO2 thin films. In: Journal of Applied Physics. 89(11), pp. 7699-7701. Available under: doi: 10.1063/1.1362658
@article{Rudiger2001Extri-9026, title={Extrinsic and intrinsic magnetoresistance contributions of CrO2 thin films}, year={2001}, doi={10.1063/1.1362658}, number={11}, volume={89}, journal={Journal of Applied Physics}, pages={7699--7701}, author={Rüdiger, Ulrich and Rabe, M. and Samm, K. and Özyilmaz, Barbaros and Pommer, Jens and Fraune, Michael and Güntherodt, Gernot and Senz, Stephan and Hesse, Dietrich} }
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