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Alternativen zur pn-Bereichsdefinition für die Herstellung kristalliner Siliziumsolarzellen

Alternativen zur pn-Bereichsdefinition für die Herstellung kristalliner Siliziumsolarzellen

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FAIKA, Katrin, 2003. Alternativen zur pn-Bereichsdefinition für die Herstellung kristalliner Siliziumsolarzellen

@phdthesis{Faika2003Alter-8992, title={Alternativen zur pn-Bereichsdefinition für die Herstellung kristalliner Siliziumsolarzellen}, year={2003}, author={Faika, Katrin}, address={Konstanz}, school={Universität Konstanz} }

Alternativen zur pn-Bereichsdefinition für die Herstellung kristalliner Siliziumsolarzellen application/pdf 2011-03-24T17:52:40Z 2011-03-24T17:52:40Z Alternative methods for pn-definition for fabrication of crystalline silicon solar cells Faika, Katrin deu Faika, Katrin 2003 In this PhD thesis alternative pn-definition methods for the fabrication of crystalline silicon solar cells have been investigated. POCl3-emitter formation via the gas phase leads to short circuits in the contact region between the emitter and alloyed aluminium. POCl3-diffusion leads to a doping of the whole surface of the silicon wafer. By alloying the aluminium, deposited later on, at temperatures over 800°C, the emitter is locally overcompensated. During subsequent cooling, the highly doped p+-layer and a metallic back contact of eutectic composition are formed. The reason for the low shunt resistance is a direct connection along the wafer surface between the base contacting eutecticum and the neighbouring emitter.<br />In principle there are two different methods to avoid short circuit formation: either by a local deposition of a diffusion prohibiting medium before emitter formation - or subsequently by removing the emitter at defined regions. These additional procedures become costly, particularly for solar cells with interdigitated p- and n-type doping regions as with Emitter Wrap Through (EWT) solar cells. The main focus of the work presented in this thesis is the Al/P-codiffusion process, leading to shunt resistances of more than 10kOhmcm2 without additional processing steps for junction isolation. The codiffusion process has proved to be successful with both mono- and multicrystalline silicon wafers, to be independent of the deposited Al layer thickness and the choice of the diffusion media.<br />The independence of the shunt resistances from the length of the alloyed aluminium grid opens the possibility to use Al/P-codiffusion for pn-definition during the fabrication of solar cells with interdigitated p- and n-type doping regions.<br />The main advantage of the codiffusion process is the significant simplification of the solar cell fabrication because three separate processing steps of the standard sequence - emitter formation, BSF formation and pn-junction isolation - can be realized in one single high temperature step. deposit-license

Dateiabrufe seit 01.10.2014 (Informationen über die Zugriffsstatistik)

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