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Near field induced defects and influence of the liquid layer thickness in Steam Laser Cleaning of silicon wafers

Near field induced defects and influence of the liquid layer thickness in Steam Laser Cleaning of silicon wafers

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LANG, Florian, Mario MOSBACHER, Paul LEIDERER, 2003. Near field induced defects and influence of the liquid layer thickness in Steam Laser Cleaning of silicon wafers. In: Applied Physics / A, Materials Science and Processing. 77(1), pp. 117-123

@article{Lang2003field-8976, title={Near field induced defects and influence of the liquid layer thickness in Steam Laser Cleaning of silicon wafers}, year={2003}, doi={10.1007/s00339-003-2101-0}, number={1}, volume={77}, journal={Applied Physics / A, Materials Science and Processing}, pages={117--123}, author={Lang, Florian and Mosbacher, Mario and Leiderer, Paul} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/8976"> <dc:contributor>Leiderer, Paul</dc:contributor> <dcterms:rights rdf:resource="https://creativecommons.org/licenses/by-nc-nd/2.0/legalcode"/> <dc:format>application/pdf</dc:format> <dc:language>eng</dc:language> <dcterms:issued>2003</dcterms:issued> <dc:creator>Leiderer, Paul</dc:creator> <dcterms:bibliographicCitation>First publ. in: Applied Physics / A, Materials Science and Processing, 77 (2003), 1, pp. 117-123</dcterms:bibliographicCitation> <dc:creator>Lang, Florian</dc:creator> <dcterms:abstract xml:lang="eng">The removal of particles from commercial silicon wafers by Steam Laser Cleaning was examined. Polystyrene colloids were used as model contaminants due to their well defined size and shape. In contrast to previous studies, where the experimental conditions on the surface were only roughly determined, special care was taken to control the amount of liquid applied to the surface. We report measurements of the cleaning threshold for different particle sizes. The comparability of the results was ensured by the reproducible conditions on the surface. Moreover, we studied the influence of different liquid film thicknesses on the cleaning process. Investigations of laser induced liquid evaporation showed that the cleaning threshold coincides with the fluence necessary for the onset of explosive vaporization. After particle removal, the surface was examined with an atomic force microscope. These investigations demonstrated that near field enhancement may cause defects on the nm-scale, but also showed that Steam Laser Cleaning possesses the capability of achieving damage-free removal for a large range of different particle sizes.</dcterms:abstract> <dc:contributor>Lang, Florian</dc:contributor> <dc:contributor>Mosbacher, Mario</dc:contributor> <dc:rights>deposit-license</dc:rights> <dc:creator>Mosbacher, Mario</dc:creator> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:52:33Z</dc:date> <dcterms:title>Near field induced defects and influence of the liquid layer thickness in Steam Laser Cleaning of silicon wafers</dcterms:title> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/8976"/> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:52:33Z</dcterms:available> </rdf:Description> </rdf:RDF>

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