3He impurity effects on the growth kinetics of 4He crystals


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SUZUKI, M., M. THIEL, Paul LEIDERER, 1996. 3He impurity effects on the growth kinetics of 4He crystals. In: Czechoslovak Journal of Physics. 46(1, Supplement 1), pp. 459-460. ISSN 0011-4626. eISSN 1572-9486

@article{Suzuki1996impur-8937, title={3He impurity effects on the growth kinetics of 4He crystals}, year={1996}, doi={10.1007/BF02569645}, number={1, Supplement 1}, volume={46}, issn={0011-4626}, journal={Czechoslovak Journal of Physics}, pages={459--460}, author={Suzuki, M. and Thiel, M. and Leiderer, Paul} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/8937"> <dc:rights>deposit-license</dc:rights> <dcterms:rights rdf:resource="https://creativecommons.org/licenses/by-nc-nd/2.0/legalcode"/> <dc:creator>Thiel, M.</dc:creator> <dc:contributor>Thiel, M.</dc:contributor> <dcterms:bibliographicCitation>First publ. in: Czechoslovak Journal of Physics 46 (1996), Supplement S1, pp. 459-460</dcterms:bibliographicCitation> <dc:contributor>Suzuki, M.</dc:contributor> <dc:creator>Leiderer, Paul</dc:creator> <dc:language>eng</dc:language> <dc:creator>Suzuki, M.</dc:creator> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:52:12Z</dc:date> <dcterms:abstract xml:lang="eng">We report on the growth kinetics of 4He crystals with a small amount of 3He impurities around 0.8K. The growth resistance was measured using the response of the charged liquid-solid interface with respect to an externally applied voltage. In 5ppm and 10ppm 3He mixtures, it is found that (1) the relaxation process can be expressed as an exponential behavior, (2) the growth resistance becomes larger compared to pure 4He and does not have a strong 3He concentration dependence, and (3) the temperature dependence of the growth resistance is much the same as for pure 4He. We discuss several possible explanations of the present experiment.</dcterms:abstract> <dc:format>application/pdf</dc:format> <dcterms:title>3He impurity effects on the growth kinetics of 4He crystals</dcterms:title> <dcterms:issued>1996</dcterms:issued> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:52:12Z</dcterms:available> <dc:contributor>Leiderer, Paul</dc:contributor> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/8937"/> </rdf:Description> </rdf:RDF>

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