Formation of ordered nanoscale semiconductor dots by ion sputtering

Zitieren

Dateien zu dieser Ressource

Prüfsumme: MD5:468a42b4dddf3e22674551a5801b4cf5

FACSKO, Stefan, Thomas DEKORSY, Clemens KOERDT, Cyril TRAPPE, Heinrich KURZ, Alexander VOGT, Hans L. HARTNAGEL, 1999. Formation of ordered nanoscale semiconductor dots by ion sputtering. In: Science. 285(5433), pp. 1551-1553. Available under: doi: 10.1126/science.285.5433.1551

@article{Facsko1999Forma-8926, title={Formation of ordered nanoscale semiconductor dots by ion sputtering}, year={1999}, doi={10.1126/science.285.5433.1551}, number={5433}, volume={285}, journal={Science}, pages={1551--1553}, author={Facsko, Stefan and Dekorsy, Thomas and Koerdt, Clemens and Trappe, Cyril and Kurz, Heinrich and Vogt, Alexander and Hartnagel, Hans L.} }

<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/8926"> <dc:contributor>Vogt, Alexander</dc:contributor> <dc:creator>Facsko, Stefan</dc:creator> <dcterms:rights rdf:resource="https://creativecommons.org/licenses/by-nc-nd/2.0/legalcode"/> <dc:creator>Vogt, Alexander</dc:creator> <dcterms:issued>1999</dcterms:issued> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:51:44Z</dc:date> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/8926"/> <dc:creator>Koerdt, Clemens</dc:creator> <dc:contributor>Kurz, Heinrich</dc:contributor> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/8926/1/Formation_of_ordered_nanoscale_semiconductor_dots_by_ion_sputtering.pdf"/> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:51:44Z</dcterms:available> <dc:contributor>Facsko, Stefan</dc:contributor> <dcterms:title>Formation of ordered nanoscale semiconductor dots by ion sputtering</dcterms:title> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/8926/1/Formation_of_ordered_nanoscale_semiconductor_dots_by_ion_sputtering.pdf"/> <dc:contributor>Trappe, Cyril</dc:contributor> <dc:language>eng</dc:language> <dc:creator>Trappe, Cyril</dc:creator> <dc:contributor>Koerdt, Clemens</dc:contributor> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:creator>Kurz, Heinrich</dc:creator> <dc:creator>Hartnagel, Hans L.</dc:creator> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dcterms:bibliographicCitation>First publ. in: Science 285 (1999), 5433, pp. 1551-1553</dcterms:bibliographicCitation> <dc:contributor>Hartnagel, Hans L.</dc:contributor> <dc:format>application/pdf</dc:format> <dc:rights>deposit-license</dc:rights> <dc:creator>Dekorsy, Thomas</dc:creator> <dcterms:abstract xml:lang="eng">A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented. Crystalline dots 35 nanometers in diameter and arranged in a regular hexagonal lattice were produced on gallium antimonide surfaces. The formation mechanism relies on a natural self-organization mechanism that occurs during the erosion of surfaces, which is based on the interplay between roughening induced by ion sputtering and smoothing due to surface diffusion.</dcterms:abstract> <dc:contributor>Dekorsy, Thomas</dc:contributor> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> </rdf:Description> </rdf:RDF>

Dateiabrufe seit 01.10.2014 (Informationen über die Zugriffsstatistik)

Formation_of_ordered_nanoscale_semiconductor_dots_by_ion_sputtering.pdf 384

Das Dokument erscheint in:

deposit-license Solange nicht anders angezeigt, wird die Lizenz wie folgt beschrieben: deposit-license

KOPS Suche


Stöbern

Mein Benutzerkonto