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dc-Messungen am zweidimensionalen Elektronensystem auf flüssigem 4He in eingeschränkter Geometrie

dc-Messungen am zweidimensionalen Elektronensystem auf flüssigem 4He in eingeschränkter Geometrie


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DOICESCU, Irena, 2005. dc-Messungen am zweidimensionalen Elektronensystem auf flüssigem 4He in eingeschränkter Geometrie

@phdthesis{Doicescu2005dc-Me-8892, title={dc-Messungen am zweidimensionalen Elektronensystem auf flüssigem 4He in eingeschränkter Geometrie}, year={2005}, author={Doicescu, Irena}, address={Konstanz}, school={Universität Konstanz} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/8892"> <dcterms:rights rdf:resource="http://nbn-resolving.org/urn:nbn:de:bsz:352-20140905103416863-3868037-7"/> <dc:creator>Doicescu, Irena</dc:creator> <dc:rights>deposit-license</dc:rights> <dcterms:alternative>dc-Measurements on the two-dimensional electron system on liquid 4He in confined geometrie</dcterms:alternative> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/8892"/> <dc:contributor>Doicescu, Irena</dc:contributor> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:51:24Z</dc:date> <dcterms:issued>2005</dcterms:issued> <dcterms:title>dc-Messungen am zweidimensionalen Elektronensystem auf flüssigem 4He in eingeschränkter Geometrie</dcterms:title> <dcterms:abstract xml:lang="eng">Slow electrons dispersed on a superfluid helium surface complete a plane capacitor due to the substrate and the dielectric fluid. They built up a horizontal layer of charges, which freely move in about 10 nm height. This pure two-dimensional system allows experiments like in semiconductors. The conventional experimental procedure for mobility and transport studies is the capacitive coupling measured in the ac-method. As an alternative method serves the direct determination of the electron flow above the liquid helium surface. This dc-method has recently been realized for the first time, and has the main advantage of the insensitivity to stray capacitances, which influences the ac-signal. In combination with the dc-method an electrostatic confinement can be used to create a quasi 1-dimensional electron channel. If the helium covered substrate is an arrangement of in-plane electrodes hold at ascending potentials, the electrons move along the x-direction above the helium film. A 2D charge transport in analogy to a FET was realized with our configuration of source, gate, and drain electrode. The electrons are directly measured by an additional pick-up-electrode. The system is ditto suited to study the transport properties by changing the dimension. A negative gate potential reduces the effective width of the split gate. The thinner the helium film, the higher is the influence of the substrate roughness, i.e., pinning effects make the electron current strongly dependent on the film thickness. By measuring the decay time on different substrates we can conclude about the mobility. The mobility can change when the thickness of the helium film decreases from bulk to a thin film of a few hundred Å. There is a pronounced dip at a certain film thickness which varies with the roughness of the substrate covered by the helium film. In this context we presented both new theoretical investigations (in collaboration with V. Shikin, Chernogolovka, Russia) and experimental data. This data support the scenario of a discontinuity in the chemical potential of the electrons which results in a dip-like behaviour in the measured electron current which is directly proportional to the mobility.</dcterms:abstract> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:51:24Z</dcterms:available> <dc:language>deu</dc:language> <dc:format>application/pdf</dc:format> </rdf:Description> </rdf:RDF>

Dateiabrufe seit 01.10.2014 (Informationen über die Zugriffsstatistik)

ID_Dissertation_2005_pdf.pdf 86

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