Bulk hydrogenation in mc-Si by PECVD SiNx deposition only

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HERZOG, Bernhard, Bernd RAABE, Giso HAHN, 2007. Bulk hydrogenation in mc-Si by PECVD SiNx deposition only. EU PVSEC. Milan, Italy, 3. Sep 2007 - 7. Sep 2007. In: The compiled state-of-the-art of PV solar technology and deployment : 22 nd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Milan, Italy, 3 - 7 September 2007. EU PVSEC. Milan, Italy, 3. Sep 2007 - 7. Sep 2007. München:WIP-Renewable Energies, pp. 1722-1725

@inproceedings{Herzog2007hydro-872, title={Bulk hydrogenation in mc-Si by PECVD SiNx deposition only}, year={2007}, address={München}, publisher={WIP-Renewable Energies}, booktitle={The compiled state-of-the-art of PV solar technology and deployment : 22 nd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Milan, Italy, 3 - 7 September 2007}, pages={1722--1725}, author={Herzog, Bernhard and Raabe, Bernd and Hahn, Giso} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/872"> <dc:contributor>Herzog, Bernhard</dc:contributor> <dcterms:rights rdf:resource="http://nbn-resolving.org/urn:nbn:de:bsz:352-20140905103416863-3868037-7"/> <dc:rights>deposit-license</dc:rights> <dc:creator>Raabe, Bernd</dc:creator> <dc:contributor>Raabe, Bernd</dc:contributor> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/872"/> <dc:contributor>Hahn, Giso</dc:contributor> <dcterms:bibliographicCitation>The compiled state-of-the-art of PV solar technology and deployment : 22nd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Milan, Italy, 3 - 7 September 2007. München: WIP-Renewable Energies, 2007, pp. 1722-1725</dcterms:bibliographicCitation> <dcterms:title>Bulk hydrogenation in mc-Si by PECVD SiNx deposition only</dcterms:title> <dc:language>eng</dc:language> <dcterms:issued>2007</dcterms:issued> <dc:creator>Herzog, Bernhard</dc:creator> <dc:creator>Hahn, Giso</dc:creator> <dcterms:abstract xml:lang="eng">Recent publications have studied the bulk hydrogenation of mc-Si by PECVD SiNx deposition after a high temperature firing step. Our investigation focuses on the effect of bulk hydrogenation in mc-Si via PECVD SiNx deposition at low temperatures without a subsequent firing step. Tests were performed on p-type String Ribbon wafers, p-type EFG Ribbon wafers and n-type and p-type wafers from mc-Si ingots. Adjacent and neighbouring wafers respectively are used to compare bulk lifetimes after single and double sided SiNx deposition on wafers as grown and after P-gettering. Bulk lifetime was measured spatially resolved with μ-PCD. Surface passivation was done with an iodine-ethanol solution. The bulk hydrogenation effect is detectable for PECVD SiNx deposition only, without additional firing step, but varies for different mc-Si materials. The effect is stronger in H-sensitive materials, however, a general statement for all mc-Si materials is difficult.</dcterms:abstract> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:51:38Z</dc:date> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:51:38Z</dcterms:available> </rdf:Description> </rdf:RDF>

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