Bulk hydrogenation in mc-Si by PECVD SiNx deposition only

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HERZOG, Bernhard, Bernd RAABE, Giso HAHN, 2007. Bulk hydrogenation in mc-Si by PECVD SiNx deposition only. EU PVSEC. Milan, Italy, 3. Sep 2007 - 7. Sep 2007. In: The compiled state-of-the-art of PV solar technology and deployment : 22nd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Milan, Italy, 3 - 7 September 2007. München:WIP-Renewable Energies, pp. 1722-1725

@inproceedings{Herzog2007hydro-872, title={Bulk hydrogenation in mc-Si by PECVD SiNx deposition only}, year={2007}, address={München}, publisher={WIP-Renewable Energies}, booktitle={The compiled state-of-the-art of PV solar technology and deployment : 22nd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Milan, Italy, 3 - 7 September 2007}, pages={1722--1725}, author={Herzog, Bernhard and Raabe, Bernd and Hahn, Giso} }

Herzog, Bernhard terms-of-use Raabe, Bernd Raabe, Bernd Hahn, Giso The compiled state-of-the-art of PV solar technology and deployment : 22nd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Milan, Italy, 3 - 7 September 2007. München: WIP-Renewable Energies, 2007, pp. 1722-1725 eng Bulk hydrogenation in mc-Si by PECVD SiN<sub>x</sub> deposition only 2007 Herzog, Bernhard Hahn, Giso 2011-03-22T17:51:38Z Recent publications have studied the bulk hydrogenation of mc-Si by PECVD SiNx deposition after a high temperature firing step. Our investigation focuses on the effect of bulk hydrogenation in mc-Si via PECVD SiNx deposition at low temperatures without a subsequent firing step. Tests were performed on p-type String Ribbon wafers, p-type EFG Ribbon wafers and n-type and p-type wafers from mc-Si ingots. Adjacent and neighbouring wafers respectively are used to compare bulk lifetimes after single and double sided SiNx deposition on wafers as grown and after P-gettering. Bulk lifetime was measured spatially resolved with μ-PCD. Surface passivation was done with an iodine-ethanol solution. The bulk hydrogenation effect is detectable for PECVD SiNx deposition only, without additional firing step, but varies for different mc-Si materials. The effect is stronger in H-sensitive materials, however, a general statement for all mc-Si materials is difficult. 2011-03-22T17:51:38Z

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