Studies of compensation behaviour in p-Type mc-Silicon

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HERZOG, Bernhard, Giso HAHN, C. KNOPF, K. WAMBACH, 2009. Studies of compensation behaviour in p-Type mc-Silicon. 24th European Photovoltaic Solar Energy Conference. Hamburg, 21. Sep 2009 - 25. Sep 2009. In: SINKE, W., ed. and others. The compiled state-of-the-art of PV solar technology and deployment : 24th European Photovoltaic Solar Energy Conference and Exhibition. 24th European Photovoltaic Solar Energy Conference. Hamburg, 21. Sep 2009 - 25. Sep 2009. Munich, Germany:WIP-Renewable Energies, pp. 1015-1019. ISBN 3-936338-25-6. Available under: doi: 10.4229/24thEUPVSEC2009-2BO.2.5

@inproceedings{Herzog2009Studi-864, title={Studies of compensation behaviour in p-Type mc-Silicon}, year={2009}, doi={10.4229/24thEUPVSEC2009-2BO.2.5}, isbn={3-936338-25-6}, address={Munich, Germany}, publisher={WIP-Renewable Energies}, booktitle={The compiled state-of-the-art of PV solar technology and deployment : 24th European Photovoltaic Solar Energy Conference and Exhibition}, pages={1015--1019}, editor={Sinke, W.}, author={Herzog, Bernhard and Hahn, Giso and Knopf, C. and Wambach, K.} }

<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/864"> <dc:contributor>Hahn, Giso</dc:contributor> <dc:contributor>Herzog, Bernhard</dc:contributor> <dcterms:title>Studies of compensation behaviour in p-Type mc-Silicon</dcterms:title> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:51:36Z</dc:date> <dcterms:bibliographicCitation>Publ. in: The compiled state-of-the-art of PV solar technology and deployment : 24th European Photovoltaic Solar Energy Conference and Exhibition ; conference 21 - 25 September 2009, exhibition 21 - 24 September 2009, Hamburg ; proceedings ; EU PVSEC / ed. by W. Sinke ... (Eds.). - Munich : WIP-Renewable Energies, 2009. - pp. 1015-1019. - ISBN 3-936338-25-6</dcterms:bibliographicCitation> <dc:contributor>Wambach, K.</dc:contributor> <dc:contributor>Knopf, C.</dc:contributor> <dc:creator>Hahn, Giso</dc:creator> <dc:creator>Herzog, Bernhard</dc:creator> <dcterms:issued>2009</dcterms:issued> <dc:rights>deposit-license</dc:rights> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:51:36Z</dcterms:available> <dc:creator>Knopf, C.</dc:creator> <dcterms:abstract xml:lang="eng">We study the effect of different compensation levels on the electrical quality of mc-silicon ingots, on the solar cell performance along the ingot height and on the carrier lifetime after different process steps. Therefore three different mc-Si ingots with various compensation levels were grown (one slightly compensated, one stronger compensated, one uncompensated reference). Wafers from selected positions over the ingot height were characterised and processed to solar cells. The results showed no difference in the solar cell performance except for the top region of the stronger compensated ingot, where the doping changes at about 85% ingot height from p-type to n-type. We observed a beneficial effect of higher resistivities on the minority carrier lifetime in the stronger compensated top region. This effect is strongly pronounced after P-gettering, due to the decreased negative impact of segregated impurities in the top region. The beneficial effect is related to the reduced net doping, i.e. reduced majority carrier concentration in the top region.</dcterms:abstract> <dc:creator>Wambach, K.</dc:creator> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/864"/> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:language>eng</dc:language> <dcterms:rights rdf:resource="http://nbn-resolving.org/urn:nbn:de:bsz:352-20140905103416863-3868037-7"/> </rdf:Description> </rdf:RDF>

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