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Minimizing the electrical losses on the front side: development of a selective emitter process from a single diffusion

Minimizing the electrical losses on the front side: development of a selective emitter process from a single diffusion

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HAVERKAMP, Helge, Amir DASTGHEIB-SHIRAZI, Bernd RAABE, Felix BOOK, Giso HAHN, 2008. Minimizing the electrical losses on the front side: development of a selective emitter process from a single diffusion. 2008 33rd IEEE Photovolatic Specialists Conference (PVSC). San Diego, CA, USA, 11. Mai 2008 - 16. Mai 2008. In: 2008 33rd IEEE Photovolatic Specialists Conference. 2008 33rd IEEE Photovolatic Specialists Conference (PVSC). San Diego, CA, USA, 11. Mai 2008 - 16. Mai 2008. IEEE, pp. 1-4. ISSN 0160-8371. ISBN 978-1-4244-1640-0

@inproceedings{Haverkamp2008-05Minim-838, title={Minimizing the electrical losses on the front side: development of a selective emitter process from a single diffusion}, year={2008}, doi={10.1109/PVSC.2008.4922443}, isbn={978-1-4244-1640-0}, issn={0160-8371}, publisher={IEEE}, booktitle={2008 33rd IEEE Photovolatic Specialists Conference}, pages={1--4}, author={Haverkamp, Helge and Dastgheib-Shirazi, Amir and Raabe, Bernd and Book, Felix and Hahn, Giso} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/838"> <dc:contributor>Raabe, Bernd</dc:contributor> <dc:creator>Raabe, Bernd</dc:creator> <dc:creator>Haverkamp, Helge</dc:creator> <dcterms:issued>2008-05</dcterms:issued> <dc:contributor>Haverkamp, Helge</dc:contributor> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:51:24Z</dcterms:available> <dc:rights>deposit-license</dc:rights> <dc:contributor>Book, Felix</dc:contributor> <dcterms:abstract xml:lang="eng">In this paper we present latest results in the development of a process for the abrication of a selective emitter structure on mono- and multicrystalline silicon solar cells. The process is based on an approach that was first introduced by Zerga et al. [1]. We have chosen a wet chemical route for an emitter etch back where the areas of the wafer that are intended for emitter metallization are shielded from etching by a screen printable etch barrier. The etch barrier is later removed by wet chemical etching. The process has yielded a gain in open circuit voltage of more than 1% and a gain in short circuit current of more than 2%. The overall efficiency gain was more than 0.3%abs due to slightly lower fill factor of the cells.</dcterms:abstract> <dcterms:rights rdf:resource="http://nbn-resolving.org/urn:nbn:de:bsz:352-20140905103416863-3868037-7"/> <dc:contributor>Dastgheib-Shirazi, Amir</dc:contributor> <dcterms:title>Minimizing the electrical losses on the front side: development of a selective emitter process from a single diffusion</dcterms:title> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:51:24Z</dc:date> <dc:creator>Dastgheib-Shirazi, Amir</dc:creator> <dc:language>eng</dc:language> <dc:creator>Book, Felix</dc:creator> <dcterms:bibliographicCitation>Paper presented at the 33rd IEEE Photovoltaic Specialists Conference (PVSC), San Diego, California, USA, 11 - 16 May 2008</dcterms:bibliographicCitation> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/838"/> <dc:contributor>Hahn, Giso</dc:contributor> <dc:creator>Hahn, Giso</dc:creator> </rdf:Description> </rdf:RDF>

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