Fitting of lateral resistances in silicon solar cells to electroluminescence images

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Kiliani_opus-104022.pdf(502.52 KB)
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2009
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urn:nbn:de:bsz:352-opus-104022
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Proceedings of the 24th European PV SEC. - München : WIP, 2009. - pp. 2088-2090. - ISBN 3-936338-25-6
Abstract
A technique for fast quantitative determination of the different terms contributing to series resistance in a solar cell from electroluminescence (EL) is introduced. A two-dimensional model of the solar cell is presented, which is used to fit the measured luminescence intensities and thereby separate the series resistance contributions of fingers and emitter. First quantitative results of this method for an industrial screen printed monocrystalline silicon solar cell are shown and the influence of lateral diffusion of charge carriers on the measurement is discussed.
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530 Physics
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Electrical Properties,Electroluminescence,Modelling
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24th European Photovoltaic Solar Energy Conference, Sep 21, 2009 - Sep 25, 2009, Hamburg
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Cite This
ISO 690KILIANI, David, Axel HERGUTH, Giso HAHN, Vita RUTKA, Michael JUNK, 2009. Fitting of lateral resistances in silicon solar cells to electroluminescence images. 24th European Photovoltaic Solar Energy Conference. Hamburg, Sep 21, 2009 - Sep 25, 2009. In: Proceedings of the 24th European PV SEC. München:WIP, pp. 2088-2090. ISBN 3-936338-25-6
BibTex
@inproceedings{Kiliani2009Fitti-796,
  year={2009},
  title={Fitting of lateral resistances in silicon solar cells to electroluminescence images},
  isbn={3-936338-25-6},
  publisher={WIP},
  address={München},
  booktitle={Proceedings of the 24th European PV SEC},
  pages={2088--2090},
  author={Kiliani, David and Herguth, Axel and Hahn, Giso and Rutka, Vita and Junk, Michael}
}
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