High-Field Approximations of the Energy-Transport Model for Semiconductors with Non-Parabolic Band Structure
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| Type of Publication: | Preprint |
| URI (citable link): | http://nbn-resolving.de/urn:nbn:de:bsz:352-opus-20969 |
| Author: | Degond, Pierre; Jüngel, Ansgar |
| Year of publication: | 2000 |
| Series: | Konstanzer Schriften in Mathematik und Informatik ; 126 |
| Summary: |
An asymptotic analysis of the energy-transport equations for semiconductors with the scaled energy relaxation time as small parameter is performed. Using a variant of the Chapman-Enskog method, high-field drift-diffusion models are derived. Furthermore, the dependence of the macroscopic parameters such as the diffusivity are investigated for parabolic and non-parabolic band approximations (in the sense of Kane). Explicit expressions of the physical parameters are obtained.
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| Subject (DDC): | 004 Computer Science |
| Link to License: | In Copyright |
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DEGOND, Pierre, Ansgar JÜNGEL, 2000. High-Field Approximations of the Energy-Transport Model for Semiconductors with Non-Parabolic Band Structure
@unpublished{Degond2000HighF-6184, title={High-Field Approximations of the Energy-Transport Model for Semiconductors with Non-Parabolic Band Structure}, year={2000}, author={Degond, Pierre and Jüngel, Ansgar} }
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