KOPS - Das Institutionelle Repositorium der Universität Konstanz

A Mixed Finite-Element Discretization of the Energy-Transport Model for Semiconductors

A Mixed Finite-Element Discretization of the Energy-Transport Model for Semiconductors

Zitieren

Dateien zu dieser Ressource

Prüfsumme: MD5:027216161dd6d5c860e3e2c159dde1d1

HOLST, Stefan, Ansgar JÜNGEL, Paola PIETRA, 2001. A Mixed Finite-Element Discretization of the Energy-Transport Model for Semiconductors

@unpublished{Holst2001Mixed-6125, title={A Mixed Finite-Element Discretization of the Energy-Transport Model for Semiconductors}, year={2001}, author={Holst, Stefan and Jüngel, Ansgar and Pietra, Paola} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/6125"> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/6125"/> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T16:09:41Z</dcterms:available> <dc:contributor>Holst, Stefan</dc:contributor> <dc:language>eng</dc:language> <dc:creator>Holst, Stefan</dc:creator> <dcterms:title>A Mixed Finite-Element Discretization of the Energy-Transport Model for Semiconductors</dcterms:title> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T16:09:41Z</dc:date> <dc:contributor>Jüngel, Ansgar</dc:contributor> <dc:creator>Jüngel, Ansgar</dc:creator> <dc:contributor>Pietra, Paola</dc:contributor> <dcterms:issued>2001</dcterms:issued> <dc:creator>Pietra, Paola</dc:creator> <dc:format>application/pdf</dc:format> <dc:rights>deposit-license</dc:rights> <dcterms:rights rdf:resource="http://nbn-resolving.org/urn:nbn:de:bsz:352-20140905103416863-3868037-7"/> <dcterms:abstract xml:lang="eng">Energy-transport models describe the flow of electrons through a semiconductor device, influenced by diffusive, electrical, and thermal effects. They consist of the continuity equations for the mass and energy, coupled with Poisson's equation for the electrostatic potential. The energy-transport model can be written in a drift-diffusion formulation which is used for the numerical approximation. The stationary equations are discretized with an exponential fitting mixed finite-element method in two space dimensions. Numerical simulations of a ballistic diode are performed and numerical convergence rates are computed. Furthermore, a two-dimensional MESFET device with parabolic band structure is simulated.</dcterms:abstract> </rdf:Description> </rdf:RDF>

Dateiabrufe seit 01.10.2014 (Informationen über die Zugriffsstatistik)

preprint_158.pdf 51

Das Dokument erscheint in:

KOPS Suche


Stöbern

Mein Benutzerkonto