A Mixed Finite-Element Discretization of the Energy-Transport Model for Semiconductors
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| Type of Publication: | Preprint |
| URI (citable link): | http://nbn-resolving.de/urn:nbn:de:bsz:352-opus-21815 |
| Author: | Holst, Stefan; Jüngel, Ansgar; Pietra, Paola |
| Year of publication: | 2001 |
| Series: | Konstanzer Schriften in Mathematik und Informatik ; 158 |
| Summary: |
Energy-transport models describe the flow of electrons through a semiconductor device, influenced by diffusive, electrical, and thermal effects. They consist of the continuity equations for the mass and energy, coupled with Poisson's equation for the electrostatic potential. The energy-transport model can be written in a drift-diffusion formulation which is used for the numerical approximation. The stationary equations are discretized with an exponential fitting mixed finite-element method in two space dimensions. Numerical simulations of a ballistic diode are performed and numerical convergence rates are computed. Furthermore, a two-dimensional MESFET device with parabolic band structure is simulated.
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| Subject (DDC): | 004 Computer Science |
| Link to License: | In Copyright |
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HOLST, Stefan, Ansgar JÜNGEL, Paola PIETRA, 2001. A Mixed Finite-Element Discretization of the Energy-Transport Model for Semiconductors
@unpublished{Holst2001Mixed-6125, title={A Mixed Finite-Element Discretization of the Energy-Transport Model for Semiconductors}, year={2001}, author={Holst, Stefan and Jüngel, Ansgar and Pietra, Paola} }
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