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Contacted resistance measurements for the quantification of boron-hydrogen pairs in crystalline silicon

Contacted resistance measurements for the quantification of boron-hydrogen pairs in crystalline silicon

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WINTER, Clemens, Axel HERGUTH, 2022. Contacted resistance measurements for the quantification of boron-hydrogen pairs in crystalline silicon. SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics. Hamelin, Germany / Online, Apr 19, 2021 - Apr 23, 2021. In: BRENDEL, Rolf, ed. and others. SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics. Melville, New York:AIP Publishing, 130016. ISSN 0094-243X. eISSN 1551-7616. ISBN 978-0-7354-4362-4. Available under: doi: 10.1063/5.0089294

@inproceedings{Winter2022Conta-59066, title={Contacted resistance measurements for the quantification of boron-hydrogen pairs in crystalline silicon}, year={2022}, doi={10.1063/5.0089294}, number={2487,1}, isbn={978-0-7354-4362-4}, issn={0094-243X}, address={Melville, New York}, publisher={AIP Publishing}, series={AIP Conference Proceedings}, booktitle={SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics}, editor={Brendel, Rolf}, author={Winter, Clemens and Herguth, Axel}, note={Article Number: 130016} }

2022-11-08T10:47:05Z Herguth, Axel eng Contacted resistance measurements for the quantification of boron-hydrogen pairs in crystalline silicon The methodology of directly contacted resistance measurements for the quantification of boron-hydrogen (BH) pairs in crystalline silicon (Si) is presented. Temperature is found to be the most critical error source. It is demonstrated that the methodology can be used to quantify changes in BH pair concentration down to the sub-permille level which corresponds to the low 10<sup>12</sup> cm<sup>−3</sup> range for 1 Ω·cm Si material commonly used for solar cells. It is furthermore demonstrated that BH dynamics can be observed not only in impurity-lean FZ-Si, but also in impurity- and defect-richer Cz-Si and mc-Si. As the used sample design enables both, lifetime and BH measurements, a correlation study of LeTID and BH dynamics was performed suggesting that BH pairs are probably not the LeTID-related defect species. However, the coincident onset of both dynamics may be interpreted as a common mode of action like the splitting of hydrogen dimers. 2022-11-08T10:47:05Z Winter, Clemens Winter, Clemens Herguth, Axel 2022

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