Theory of silicon spin qubit relaxation in a synthetic spin-orbit field

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HOSSEINKHANI, Amin, Guido BURKARD, 2022. Theory of silicon spin qubit relaxation in a synthetic spin-orbit field. In: Physical Review B. American Physical Society (APS). 106(7), 075415. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.106.075415

@article{Hosseinkhani2022Theor-58814, title={Theory of silicon spin qubit relaxation in a synthetic spin-orbit field}, year={2022}, doi={10.1103/PhysRevB.106.075415}, number={7}, volume={106}, issn={2469-9950}, journal={Physical Review B}, author={Hosseinkhani, Amin and Burkard, Guido}, note={Article Number: 075415} }

<rdf:RDF xmlns:dcterms="" xmlns:dc="" xmlns:rdf="" xmlns:bibo="" xmlns:dspace="" xmlns:foaf="" xmlns:void="" xmlns:xsd="" > <rdf:Description rdf:about=""> <dc:contributor>Hosseinkhani, Amin</dc:contributor> <dc:date rdf:datatype="">2022-10-14T07:27:22Z</dc:date> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dcterms:available rdf:datatype="">2022-10-14T07:27:22Z</dcterms:available> <dc:creator>Hosseinkhani, Amin</dc:creator> <dspace:isPartOfCollection rdf:resource=""/> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dcterms:isPartOf rdf:resource=""/> <bibo:uri rdf:resource=""/> <dcterms:issued>2022</dcterms:issued> <dcterms:abstract xml:lang="eng">We develop the theory of single-electron silicon spin qubit relaxation in the presence of a magnetic field gradient. Such field gradients are routinely generated by on-chip micromagnets to allow for electrically controlled quantum gates on spin qubits. We build on a valley-dependent envelope function theory that enables the analysis of the electron wave function in a silicon quantum dot with an arbitrary roughness at the interface. We assume the presence of single-layer atomic steps at a Si/SiGe interface and study how the presence of a gradient field modifies the spin-mixing mechanisms. We show that our theoretical modeling can quantitatively reproduce the results of experimental measurements of qubit relaxation in silicon in the presence of a micromagnet. We further study how a field gradient can modify the EDSR Rabi frequency as well as the quality factor of a silicon spin qubit. We show that this strongly depends on the details of the interface roughness. Interestingly, for a quantum dot with an ideally flat interface, adding a micromagnet can give rise to the reduction of the EDSR frequency within some interval of the external magnetic field strength.</dcterms:abstract> <dc:creator>Burkard, Guido</dc:creator> <dc:language>eng</dc:language> <dc:contributor>Burkard, Guido</dc:contributor> <dcterms:title>Theory of silicon spin qubit relaxation in a synthetic spin-orbit field</dcterms:title> </rdf:Description> </rdf:RDF>

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