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Formation Dynamics of BH and GaH‐Pairs in Crystalline Silicon during Dark Annealing

Formation Dynamics of BH and GaH‐Pairs in Crystalline Silicon during Dark Annealing

Type of Publication: Journal article
Publication status: Published
URI (citable link): http://nbn-resolving.de/urn:nbn:de:bsz:352-2-5m15ian72bm4
Author: Acker, Yanik; Simon, Jochen; Herguth, Axel
Year of publication: 2022
Published in: Physica Status Solidi (A) - Applications and Materials Science ; 219 (2022), 17. - 2200142. - Wiley. - ISSN 1862-6300. - eISSN 1862-6319
DOI (citable link): https://dx.doi.org/10.1002/pssa.202200142
Summary:
In crystalline silicon, atomic hydrogen released from hydrogen dimers forms acceptor-hydrogen pairs during annealing in the dark at elevated temperatures. In this study the formation of boron-hydrogen (BH) and gallium-hydrogen (GaH) pairs in 1 cm silicon is investigated at temperatures ranging from 140 to 220°C. Acceptor-hydrogen concentrations in the low 1014cm−3 range are quantified by means of highly sensitive resistance measurements. GaH pairs are generally found to form faster than BH pairs. Arrhenius analysis shows a difference in activation energy (BH: 1.20eV, GaH: 1.04eV) while the trial frequency is the same (∼4×108s−1).
Subject (DDC): 530 Physics
Keywords: crystalline silicon, dynamics, boron-hydrogen pairs, gallium-hydrogen pairs
Link to License: In Copyright
Bibliography of Konstanz: Yes
Refereed: Yes

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ACKER, Yanik, Jochen SIMON, Axel HERGUTH, 2022. Formation Dynamics of BH and GaH‐Pairs in Crystalline Silicon during Dark Annealing. In: Physica Status Solidi (A) - Applications and Materials Science. Wiley. 219(17), 2200142. ISSN 1862-6300. eISSN 1862-6319. Available under: doi: 10.1002/pssa.202200142

@article{Acker2022-09Forma-57866, title={Formation Dynamics of BH and GaH‐Pairs in Crystalline Silicon during Dark Annealing}, year={2022}, doi={10.1002/pssa.202200142}, number={17}, volume={219}, issn={1862-6300}, journal={Physica Status Solidi (A) - Applications and Materials Science}, author={Acker, Yanik and Simon, Jochen and Herguth, Axel}, note={Article Number: 2200142} }

Acker, Yanik Simon, Jochen Acker, Yanik 2022-06-29T11:02:03Z eng 2022-06-29T11:02:03Z Herguth, Axel In crystalline silicon, atomic hydrogen released from hydrogen dimers forms acceptor-hydrogen pairs during annealing in the dark at elevated temperatures. In this study the formation of boron-hydrogen (BH) and gallium-hydrogen (GaH) pairs in 1 cm silicon is investigated at temperatures ranging from 140 to 220°C. Acceptor-hydrogen concentrations in the low 10<sup>14</sup>cm<sup>−3</sup> range are quantified by means of highly sensitive resistance measurements. GaH pairs are generally found to form faster than BH pairs. Arrhenius analysis shows a difference in activation energy (BH: 1.20eV, GaH: 1.04eV) while the trial frequency is the same (∼4×10<sup>8</sup>s<sup>−1</sup>). Simon, Jochen Formation Dynamics of BH and GaH‐Pairs in Crystalline Silicon during Dark Annealing 2022-09 terms-of-use Herguth, Axel

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