Type of Publication: | Journal article |
Publication status: | Published |
URI (citable link): | http://nbn-resolving.de/urn:nbn:de:bsz:352-2-5m15ian72bm4 |
Author: | Acker, Yanik; Simon, Jochen; Herguth, Axel |
Year of publication: | 2022 |
Published in: | Physica Status Solidi (A) - Applications and Materials Science ; 219 (2022), 17. - 2200142. - Wiley. - ISSN 1862-6300. - eISSN 1862-6319 |
DOI (citable link): | https://dx.doi.org/10.1002/pssa.202200142 |
Summary: |
In crystalline silicon, atomic hydrogen released from hydrogen dimers forms acceptor-hydrogen pairs during annealing in the dark at elevated temperatures. In this study the formation of boron-hydrogen (BH) and gallium-hydrogen (GaH) pairs in 1 cm silicon is investigated at temperatures ranging from 140 to 220°C. Acceptor-hydrogen concentrations in the low 1014cm−3 range are quantified by means of highly sensitive resistance measurements. GaH pairs are generally found to form faster than BH pairs. Arrhenius analysis shows a difference in activation energy (BH: 1.20eV, GaH: 1.04eV) while the trial frequency is the same (∼4×108s−1).
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Subject (DDC): | 530 Physics |
Keywords: | crystalline silicon, dynamics, boron-hydrogen pairs, gallium-hydrogen pairs |
Link to License: | In Copyright |
Bibliography of Konstanz: | Yes |
Refereed: | Yes |
ACKER, Yanik, Jochen SIMON, Axel HERGUTH, 2022. Formation Dynamics of BH and GaH‐Pairs in Crystalline Silicon during Dark Annealing. In: Physica Status Solidi (A) - Applications and Materials Science. Wiley. 219(17), 2200142. ISSN 1862-6300. eISSN 1862-6319. Available under: doi: 10.1002/pssa.202200142
@article{Acker2022-09Forma-57866, title={Formation Dynamics of BH and GaH‐Pairs in Crystalline Silicon during Dark Annealing}, year={2022}, doi={10.1002/pssa.202200142}, number={17}, volume={219}, issn={1862-6300}, journal={Physica Status Solidi (A) - Applications and Materials Science}, author={Acker, Yanik and Simon, Jochen and Herguth, Axel}, note={Article Number: 2200142} }
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