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Influence of Silicon Substrate Surface Finish on the Screen-Printed Silver Metallization of Polysilicon-Based Passivating Contacts

Influence of Silicon Substrate Surface Finish on the Screen-Printed Silver Metallization of Polysilicon-Based Passivating Contacts

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CHAUDHARY, Aditya, Jan HOSS, Jan LOSSEN, Frank HUSTER, Radovan KOPECEK, René VAN SWAAIJ, Miro ZEMAN, 2022. Influence of Silicon Substrate Surface Finish on the Screen-Printed Silver Metallization of Polysilicon-Based Passivating Contacts. In: Physica Status Solidi (A) - Applications and Materials Science. Wiley-Blackwell - STM. 219, 2100869. ISSN 1862-6300. eISSN 1862-6319. Available under: doi: 10.1002/pssa.20210086

@article{Chaudhary2022Influ-57535, title={Influence of Silicon Substrate Surface Finish on the Screen-Printed Silver Metallization of Polysilicon-Based Passivating Contacts}, year={2022}, doi={10.1002/pssa.20210086}, volume={219}, issn={1862-6300}, journal={Physica Status Solidi (A) - Applications and Materials Science}, author={Chaudhary, Aditya and Hoss, Jan and Lossen, Jan and Huster, Frank and Kopecek, Radovan and van Swaaij, René and Zeman, Miro}, note={Article Number: 2100869} }

Chaudhary, Aditya 2022-05-16T08:28:05Z Influence of Silicon Substrate Surface Finish on the Screen-Printed Silver Metallization of Polysilicon-Based Passivating Contacts Lossen, Jan Passivated contact based on a thin interfacial oxide and a highly doped poly-silicon layer has emerged as the next evolutionary step to increase the efficienciesof industrial silicon solar cells. To take maximum advantage from this layer stack,it is vital to limit the losses at the metal polysilicon interface, which can bequantified as metal polysilicon recombination current density (J<sub>0met</sub>) and contactresistivity. In cell concepts, wherein a large variety of silicon substrate surfacefinish can be obtained, it is essential to know how the surfacefinish affects the J<sub>0met</sub> and contact resistivity. Herein, commercially availablefire through silverpaste and the metal-polysilicon recombination current densities and contactresistivity are used for three different silicon substrate surfacefinishes, namely:planar or saw damage etched (SDE), chemically polished in acidic solution andalkaline pyramidal textured. Contact resistivity values below 3 mΩcm2withJ<sub>0met</sub> in order of the recombination current density of the doped region (J<sub>0pass</sub>) areobtained for samples with planar surface for both 150 and 200 nm nþpolysiliconlayer thicknesses. The results presented in this work show that the samples withflat substrate morphology outperform the samples with textured surfaces. Zeman, Miro Huster, Frank Lossen, Jan Chaudhary, Aditya Kopecek, Radovan Hoss, Jan 2022 Huster, Frank van Swaaij, René eng Hoss, Jan 2022-05-16T08:28:05Z van Swaaij, René Kopecek, Radovan Zeman, Miro

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