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On the Role of AlO<sub>x</sub> Thickness in AlO<sub>x</sub>/SiN<sub>y</sub> : H Layer Stacks Regarding Light- and Elevated Temperature-Induced Degradation and Hydrogen Diffusion in c-Si

On the Role of AlOx Thickness in AlOx/SiNy : H Layer Stacks Regarding Light- and Elevated Temperature-Induced Degradation and Hydrogen Diffusion in c-Si

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SCHMID, Andreas, Christian FISCHER, Daniel SKORKA, Axel HERGUTH, Clemens WINTER, Annika ZUSCHLAG, Giso HAHN, 2021. On the Role of AlOx Thickness in AlOx/SiNy : H Layer Stacks Regarding Light- and Elevated Temperature-Induced Degradation and Hydrogen Diffusion in c-Si. In: IEEE Journal of Photovoltaics. IEEE. 11(4), pp. 967-973. ISSN 2156-3403. eISSN 2156-3403. Available under: doi: 10.1109/JPHOTOV.2021.3075850

@article{Schmid2021Thick-54384, title={On the Role of AlOx Thickness in AlOx/SiNy : H Layer Stacks Regarding Light- and Elevated Temperature-Induced Degradation and Hydrogen Diffusion in c-Si}, year={2021}, doi={10.1109/JPHOTOV.2021.3075850}, number={4}, volume={11}, issn={2156-3403}, journal={IEEE Journal of Photovoltaics}, pages={967--973}, author={Schmid, Andreas and Fischer, Christian and Skorka, Daniel and Herguth, Axel and Winter, Clemens and Zuschlag, Annika and Hahn, Giso} }

eng 2021 Hahn, Giso Herguth, Axel Schmid, Andreas Hahn, Giso Light- and elevated temperature-induced degradation (LeTID) is assumed to be triggered by the hydrogen content in the crystalline silicon bulk. This article investigates differently thick atomic layer-deposited aluminum oxide (AlO <sub>x</sub> ) layers acting as diffusion barrier for hydrogen originating from a hydrogen-rich silicon nitride (SiN <sub>y</sub> :H) layer. We demonstrate that the extent of LeTID can be significantly reduced by adjusting the AlO <sub>x</sub> layer thickness up to 25 nm. To directly measure the diffusing species, a deuterium-rich SiN <sub>y</sub> :D layer is deposited and the deuterium content is measured in an amorphous Si layer at the back side of the wafer via secondary ion mass spectrometry. Thus, a diffusion length of deuterium in the AlO <sub>x</sub> layer of (3.8±1.6) nm is determined at a firing temperature of (743±2)∘C . These results are not only a contribution to determine the LeTID formation dynamics, but also can be used to control LeTID in silicon wafers and solar cells. Zuschlag, Annika Winter, Clemens Fischer, Christian Skorka, Daniel Skorka, Daniel 2021-07-22T07:34:25Z Zuschlag, Annika Fischer, Christian Herguth, Axel 2021-07-22T07:34:25Z Winter, Clemens On the Role of AlO<sub>x</sub> Thickness in AlO<sub>x</sub>/SiN<sub>y</sub> : H Layer Stacks Regarding Light- and Elevated Temperature-Induced Degradation and Hydrogen Diffusion in c-Si Schmid, Andreas

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