Spin-Dependent Noise
| Type of Publication: | Contribution to a conference collection |
| Publication status: | Published |
| Author: | Brandt, Martin S.; Goennenwein, Sebastian T. B.; Stutzmann, Martin |
| Year of publication: | 2001 |
| Conference: | ICNF 2001 : 16th International Conference on Noise in Physical Systems and 1/f Fluctuations, Oct 22, 2001 - Oct 25, 2001, Gainesville, Florida |
| Published in: | Noise in physical systems and 1/f fluctuations ICNF 2001 : proceedings of the 16th International Conference / Bosman, Gijs (ed.). - Singapore : World Scientific Pub. Co., 2001. - pp. 103-106. - ISBN 978-981-02-4677-8 |
| DOI (citable link): | https://dx.doi.org/10.1142/9789812811165_0023 |
| Summary: |
It is shown that spin-dependent transport processes can influence the electronic noise of semiconductors and can be used to microscopically identify states leading to generation-recombination noise. A model accounting for the change of the noise power density based on a resonant reduction of the carrier lifetimes is summarized.
|
| Subject (DDC): | 530 Physics |
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BRANDT, Martin S., Sebastian T. B. GOENNENWEIN, Martin STUTZMANN, 2001. Spin-Dependent Noise. ICNF 2001 : 16th International Conference on Noise in Physical Systems and 1/f Fluctuations. Gainesville, Florida, Oct 22, 2001 - Oct 25, 2001. In: BOSMAN, Gijs, ed.. Noise in physical systems and 1/f fluctuations ICNF 2001 : proceedings of the 16th International Conference. Singapore:World Scientific Pub. Co., pp. 103-106. ISBN 978-981-02-4677-8. Available under: doi: 10.1142/9789812811165_0023
@inproceedings{Brandt2001SpinD-53560, title={Spin-Dependent Noise}, year={2001}, doi={10.1142/9789812811165_0023}, isbn={978-981-02-4677-8}, address={Singapore}, publisher={World Scientific Pub. Co.}, booktitle={Noise in physical systems and 1/f fluctuations ICNF 2001 : proceedings of the 16th International Conference}, pages={103--106}, editor={Bosman, Gijs}, author={Brandt, Martin S. and Goennenwein, Sebastian T. B. and Stutzmann, Martin} }
<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/53560"> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:contributor>Goennenwein, Sebastian T. B.</dc:contributor> <dc:creator>Goennenwein, Sebastian T. B.</dc:creator> <dc:creator>Stutzmann, Martin</dc:creator> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:creator>Brandt, Martin S.</dc:creator> <dc:rights>terms-of-use</dc:rights> <dc:language>eng</dc:language> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:contributor>Stutzmann, Martin</dc:contributor> <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/53560"/> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dcterms:title>Spin-Dependent Noise</dcterms:title> <dcterms:issued>2001</dcterms:issued> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2021-04-30T12:25:30Z</dcterms:available> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2021-04-30T12:25:30Z</dc:date> <dc:contributor>Brandt, Martin S.</dc:contributor> <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/> <dcterms:abstract xml:lang="eng">It is shown that spin-dependent transport processes can influence the electronic noise of semiconductors and can be used to microscopically identify states leading to generation-recombination noise. A model accounting for the change of the noise power density based on a resonant reduction of the carrier lifetimes is summarized.</dcterms:abstract> </rdf:Description> </rdf:RDF>
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