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Defect-related noise in AlN and AlGaN alloys

Type of Publication: Journal article
Publication status: Published
Author: Gönnenwein, Sebastian T. B.; Zeisel, Roland; Baldovino, Silvia; Ambacher, Oliver; Brandt, Martin S.; Stutzmann, Martin
Year of publication: 2001
Published in: Physica B: Condensed Matter ; 308-310 (2001). - pp. 69-72. - Elsevier. - ISSN 0921-4526. - eISSN 1873-2135
DOI (citable link): https://dx.doi.org/10.1016/S0921-4526(01)00655-X
Summary:
The electronic noise properties of Si-doped AlN and Al0.3Ga0.7N are investigated. In AlN : Si, generation–recombination (g–r) noise is observed and shown to be linked to DX-centers. The potential energy barriers for capture into and emission from the DX− ground state are quantitatively determined from the noise measurements. In Al0.3Ga0.7N:Si, in addition to 1/f noise, we find two g–r noise processes. However, an unambiguous identification of their origin proves to be difficult.
Subject (DDC): 530 Physics
Keywords: Electronic noise, DX-center, AlN, Group-III nitrides
Refereed: Unknown

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GÖNNENWEIN, Sebastian T. B., Roland ZEISEL, Silvia BALDOVINO, Oliver AMBACHER, Martin S. BRANDT, Martin STUTZMANN, 2001. Defect-related noise in AlN and AlGaN alloys. In: Physica B: Condensed Matter. Elsevier. 308-310, pp. 69-72. ISSN 0921-4526. eISSN 1873-2135. Available under: doi: 10.1016/S0921-4526(01)00655-X

@article{Gonnenwein2001Defec-53546, title={Defect-related noise in AlN and AlGaN alloys}, year={2001}, doi={10.1016/S0921-4526(01)00655-X}, volume={308-310}, issn={0921-4526}, journal={Physica B: Condensed Matter}, pages={69--72}, author={Gönnenwein, Sebastian T. B. and Zeisel, Roland and Baldovino, Silvia and Ambacher, Oliver and Brandt, Martin S. and Stutzmann, Martin} }

2021-04-29T14:06:44Z Ambacher, Oliver Gönnenwein, Sebastian T. B. 2021-04-29T14:06:44Z The electronic noise properties of Si-doped AlN and Al<sub>0.3</sub>Ga<sub>0.7</sub>N are investigated. In AlN : Si, generation–recombination (g–r) noise is observed and shown to be linked to DX-centers. The potential energy barriers for capture into and emission from the DX− ground state are quantitatively determined from the noise measurements. In Al<sub>0.3</sub>Ga<sub>0.7</sub>N:Si, in addition to 1/f noise, we find two g–r noise processes. However, an unambiguous identification of their origin proves to be difficult. 2001 terms-of-use eng Defect-related noise in AlN and AlGaN alloys Zeisel, Roland Baldovino, Silvia Ambacher, Oliver Stutzmann, Martin Stutzmann, Martin Brandt, Martin S. Baldovino, Silvia Gönnenwein, Sebastian T. B. Brandt, Martin S. Zeisel, Roland

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