Hydrogen and Magnetism in Ga1-xMnxAs

Type of Publication: Contribution to a collection
Publication status: Published
Author: Gönnenwein, Sebastian T. B.; Wassner, Thomas A.; Huebl, Hans; Koeder, Achim; Schoch, Wladimir; Waag, Andreas; Philipp, Jan B.; Opel, Matthias; Gross, Rudolf; Brandt, Martin S. et al.
Year of publication: 2004
Published in: Advances in Solid State Physics / Kramer, Bernhard (ed.). - Berlin : Springer, 2004. - (Advances in Solid State Physics ; 44). - pp. 453-465. - ISBN 978-3-540-21148-8
DOI (citable link): https://dx.doi.org/10.1007/978-3-540-39970-4_35
Summary:
Our recent studies of the influence of hydrogenation on the ferromagnetic semiconductor Ga1−xMnxAs are reviewed. We find that upon exposure to a remote DC hydrogen plasma, the hole density p in Ga1−xMnxAs thin films with x=0.037 and x=0.051 can be reduced by several orders of magnitude, while the density of Mn magnetic moments is not significantly affected by the plasma treatment. The ferromagnetism clearly present in the as-grown samples vanishes after hydrogen incorporation. We analyze the effect of the hydrogenation in detail with the help of secondary ion mass spectroscopy, electronic transport, Hall, DC magnetization, and Fourier-transform infra-red absorption experiments. All results indicate that the Mn acceptors are electrically passivated by the formation of Mn-As-H complexes, resulting in the loss of long-range magnetic ordering.
Subject (DDC): 530 Physics

Cite This

Files in this item

Files Size Format View

There are no files associated with this item.

GÖNNENWEIN, Sebastian T. B., Thomas A. WASSNER, Hans HUEBL, Achim KOEDER, Wladimir SCHOCH, Andreas WAAG, Jan B. PHILIPP, Matthias OPEL, Rudolf GROSS, Martin S. BRANDT, 2004. Hydrogen and Magnetism in Ga1-xMnxAs. In: KRAMER, Bernhard, ed.. Advances in Solid State Physics. Berlin:Springer, pp. 453-465. ISBN 978-3-540-21148-8. Available under: doi: 10.1007/978-3-540-39970-4_35

@incollection{Gonnenwein2004Hydro-53543, title={Hydrogen and Magnetism in Ga1-xMnxAs}, year={2004}, doi={10.1007/978-3-540-39970-4_35}, number={44}, isbn={978-3-540-21148-8}, address={Berlin}, publisher={Springer}, series={Advances in Solid State Physics}, booktitle={Advances in Solid State Physics}, pages={453--465}, editor={Kramer, Bernhard}, author={Gönnenwein, Sebastian T. B. and Wassner, Thomas A. and Huebl, Hans and Koeder, Achim and Schoch, Wladimir and Waag, Andreas and Philipp, Jan B. and Opel, Matthias and Gross, Rudolf and Brandt, Martin S.} }

eng Koeder, Achim 2021-04-29T13:47:57Z 2004 Philipp, Jan B. Gross, Rudolf Gönnenwein, Sebastian T. B. Wassner, Thomas A. Gross, Rudolf Our recent studies of the influence of hydrogenation on the ferromagnetic semiconductor Ga<sub>1−x</sub>Mn<sub>x</sub>As are reviewed. We find that upon exposure to a remote DC hydrogen plasma, the hole density p in Ga<sub>1−x</sub>Mn<sub>x</sub>As thin films with x=0.037 and x=0.051 can be reduced by several orders of magnitude, while the density of Mn magnetic moments is not significantly affected by the plasma treatment. The ferromagnetism clearly present in the as-grown samples vanishes after hydrogen incorporation. We analyze the effect of the hydrogenation in detail with the help of secondary ion mass spectroscopy, electronic transport, Hall, DC magnetization, and Fourier-transform infra-red absorption experiments. All results indicate that the Mn acceptors are electrically passivated by the formation of Mn-As-H complexes, resulting in the loss of long-range magnetic ordering. Schoch, Wladimir terms-of-use Gönnenwein, Sebastian T. B. Waag, Andreas Waag, Andreas Koeder, Achim Opel, Matthias Philipp, Jan B. Hydrogen and Magnetism in Ga<sub>1-x</sub>Mn<sub>x</sub>As 2021-04-29T13:47:57Z Huebl, Hans Opel, Matthias Schoch, Wladimir Brandt, Martin S. Huebl, Hans Wassner, Thomas A. Brandt, Martin S.

This item appears in the following Collection(s)

Search KOPS


Browse

My Account