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Spin-dependent transport in elemental and compound semiconductors and nanostructures

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Spin-dependent transport in elemental and compound semiconductors and nanostructures

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BRANDT, Martin S., Sebastian T. B. GÖNNENWEIN, Thomas GRAF, Hans HUEBL, S. LAUTERBACH, Martin STUTZMANN, 2004. Spin-dependent transport in elemental and compound semiconductors and nanostructures. In: Physica Status Solidi (C) - Current Topics in Solid State Physics. Wiley-Blackwell. 1(8), pp. 2056-2093. ISSN 1610-1634. eISSN 1610-1642. Available under: doi: 10.1002/pssc.200404763

@article{Brandt2004Spind-53256, title={Spin-dependent transport in elemental and compound semiconductors and nanostructures}, year={2004}, doi={10.1002/pssc.200404763}, number={8}, volume={1}, issn={1610-1634}, journal={Physica Status Solidi (C) - Current Topics in Solid State Physics}, pages={2056--2093}, author={Brandt, Martin S. and Gönnenwein, Sebastian T. B. and Graf, Thomas and Huebl, Hans and Lauterbach, S. and Stutzmann, Martin} }

<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/53256"> <dc:creator>Graf, Thomas</dc:creator> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dc:creator>Gönnenwein, Sebastian T. B.</dc:creator> <dcterms:title>Spin-dependent transport in elemental and compound semiconductors and nanostructures</dcterms:title> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2021-03-25T09:08:03Z</dcterms:available> <dc:rights>terms-of-use</dc:rights> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:creator>Stutzmann, Martin</dc:creator> <dc:creator>Lauterbach, S.</dc:creator> <dc:contributor>Lauterbach, S.</dc:contributor> <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/53256"/> <dc:creator>Huebl, Hans</dc:creator> <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/> <dc:contributor>Gönnenwein, Sebastian T. B.</dc:contributor> <dc:language>eng</dc:language> <dc:contributor>Brandt, Martin S.</dc:contributor> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2021-03-25T09:08:03Z</dc:date> <dcterms:issued>2004</dcterms:issued> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dcterms:abstract xml:lang="eng">The results obtained on spin‐dependent processes via electrically detected magnetic resonance (EDMR), capacitance‐detected magnetic resonance (CDMR) and noise‐detected magnetic resonance (NDMR) in a variety of different semiconductor materials, devices and nanostructures are reviewed. Similar to optically detected magnetic resonance (ODMR), these detection methods are significantly more sensitive for the detection of paramagnetic states and defects than conventional electron spin resonance (ESR) and can be applied also to semiconductors with an indirect band gap. Using GaAs/AlGaAs‐heterostructures and thin films of amorphous hydrogenated silicon (a‐Si:H) as examples, the physics of spin‐dependent recombination and its detection via spin‐dependent photoconductivity is briefly recapitulated. EDMR on pn‐diodes from GaP, GaAsP and group‐III nitrides, resonant spin–spin scattering in strained Si/SiGe heterostructures, new hysteresis effects in the longitudinal magneto‐transport through two‐dimensional electron gases and edge‐magneto plasmons in different III–V heterostructures are discussed. Various aspects of ferromagnetic III–V semiconductors are investigated, including doping of GaN with Mn, inhomogeneous magnetization of GaMnAs and control of ferromagnetism in semiconductors via hydrogen. Finally, preliminary EDMR experiments on the detection of single paramagnetic defects in MOSFETs via random telegraph noise are presented.</dcterms:abstract> <dc:contributor>Stutzmann, Martin</dc:contributor> <dc:contributor>Graf, Thomas</dc:contributor> <dc:contributor>Huebl, Hans</dc:contributor> <dc:creator>Brandt, Martin S.</dc:creator> </rdf:Description> </rdf:RDF>

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