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Magnetocrystalline anisotropy and magnetization reversal in Ga<sub>1−x</sub>Mn<sub>x</sub>P synthesized by ion implantation and pulsed-laser melting

Magnetocrystalline anisotropy and magnetization reversal in Ga1−xMnxP synthesized by ion implantation and pulsed-laser melting

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BIHLER, Christoph, Michael KRAUS, Hans HUEBL, Martin S. BRANDT, Sebastian T. B. GÖNNENWEIN, Matthias OPEL, Michael A. SCARPULLA, Peter R. STONE, Rouin FARSHCHI, Oscar D. DUBON, 2007. Magnetocrystalline anisotropy and magnetization reversal in Ga1−xMnxP synthesized by ion implantation and pulsed-laser melting. In: Physical Review B. American Physical Society (APS). 75(21), 214419. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.75.214419

@article{Bihler2007-03-23T16:06:19ZMagne-53108, title={Magnetocrystalline anisotropy and magnetization reversal in Ga1−xMnxP synthesized by ion implantation and pulsed-laser melting}, year={2007}, doi={10.1103/PhysRevB.75.214419}, number={21}, volume={75}, issn={2469-9950}, journal={Physical Review B}, author={Bihler, Christoph and Kraus, Michael and Huebl, Hans and Brandt, Martin S. and Gönnenwein, Sebastian T. B. and Opel, Matthias and Scarpulla, Michael A. and Stone, Peter R. and Farshchi, Rouin and Dubon, Oscar D.}, note={Article Number: 214419} }

Opel, Matthias Gönnenwein, Sebastian T. B. Stone, Peter R. Brandt, Martin S. Gönnenwein, Sebastian T. B. Scarpulla, Michael A. Scarpulla, Michael A. 2021-03-09T09:38:59Z We report the observation of ferromagnetic resonance (FMR) and the determination of the magnetocrystalline anisotropy in (100)-oriented single-crystalline thin film samples of Ga<sub>1−x</sub>Mn<sub>x</sub>P with x=0.042. The contributions to the magnetic anisotropy were determined by measuring the angular and the temperature dependencies of the FMR resonance fields and by superconducting quantum interference device magnetometry. The largest contribution to the anisotropy is a uniaxial component perpendicular to the film plane; however, a negative contribution from cubic anisotropy is also found. Additional in-plane uniaxial components are observed at low temperatures, which lift the degeneracy between the in-plane [011] and [01¯1] directions as well as between the in-plane [010] and [001] directions. Near T=5K, the easy magnetization axis is close to the in-plane [01¯1] direction. All anisotropy parameters decrease with increasing temperature and disappear above the Curie temperature T<sub>C</sub>. A consistent picture of the magnetic anisotropy of ferromagnetic Ga<sub>1−x</sub>Mn<sub>x</sub>P emerges from the FMR and magnetometry data. The latter can be successfully modeled when both coherent magnetization rotation and magnetic domain nucleation are considered. Magnetocrystalline anisotropy and magnetization reversal in Ga<sub>1−x</sub>Mn<sub>x</sub>P synthesized by ion implantation and pulsed-laser melting Bihler, Christoph eng Dubon, Oscar D. 2021-03-09T09:38:59Z Farshchi, Rouin Kraus, Michael Brandt, Martin S. 2007-03-23T16:06:19Z Huebl, Hans Huebl, Hans Dubon, Oscar D. Opel, Matthias Stone, Peter R. Farshchi, Rouin Kraus, Michael Bihler, Christoph terms-of-use

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