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Ga<sub>1−x</sub>Mn<sub>x</sub>As/piezoelectric actuator hybrids : A model system for magnetoelastic magnetization manipulation

Ga1−xMnxAs/piezoelectric actuator hybrids : A model system for magnetoelastic magnetization manipulation

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BIHLER, Christoph, Matthias ALTHAMMER, Andreas BRANDLMAIER, Stephan GEPRÄGS, Mathias WEILER, Matthias OPEL, Wladimir SCHOCH, Wolfgang LIMMER, Rudolf GROSS, Martin S. BRANDT, Sebastian T. B. GÖNNENWEIN, 2008. Ga1−xMnxAs/piezoelectric actuator hybrids : A model system for magnetoelastic magnetization manipulation. In: Physical Review B. American Physical Society (APS). 78(4), 045203. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.78.045203

@article{Bihler2008-04-08T19:01:26ZAspie-53105, title={Ga1−xMnxAs/piezoelectric actuator hybrids : A model system for magnetoelastic magnetization manipulation}, year={2008}, doi={10.1103/PhysRevB.78.045203}, number={4}, volume={78}, issn={2469-9950}, journal={Physical Review B}, author={Bihler, Christoph and Althammer, Matthias and Brandlmaier, Andreas and Geprägs, Stephan and Weiler, Mathias and Opel, Matthias and Schoch, Wladimir and Limmer, Wolfgang and Gross, Rudolf and Brandt, Martin S. and Gönnenwein, Sebastian T. B.}, note={Article Number: 045203} }

Gönnenwein, Sebastian T. B. eng Opel, Matthias 2021-03-09T08:39:43Z Opel, Matthias Schoch, Wladimir Bihler, Christoph Brandlmaier, Andreas Ga<sub>1−x</sub>Mn<sub>x</sub>As/piezoelectric actuator hybrids : A model system for magnetoelastic magnetization manipulation 2008-04-08T19:01:26Z Gross, Rudolf Althammer, Matthias Weiler, Mathias We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor and applying the piezo stress along its [110] direction, we quantify the magnetic anisotropy as a function of the voltage V<sub>p</sub> applied to the piezoelectric actuator using anisotropic magnetoresistance techniques. As the magnetic anisotropy in GaMnAs substantially changes as a function of temperature T, the ratio of the magnetoelastic and the magnetocrystalline anistropies can be tuned from approximately 1/4 to 4. Thus, GaMnAs/piezoelectric actuator hybrids are an ideal model system for the investigation of different piezoelastic magnetization control regimes. At T=5 K the magnetoelastic term is a minor contribution to the magnetic anisotropy. Nevertheless, we show that the switching fields of ρ(<sub>μ0</sub>H) loops are shifted as a function of V<sub>p</sub> at this temperature. At 50 K—where the magnetoelastic term dominates the magnetic anisotropy—we are able to tune the magnetization orientation by about 70° solely by means of the electrical voltage V<sub>p</sub> applied. Furthermore, we derive the magnetostrictive constant λ111 as a function of temperature and find values consistent with earlier results. We argue that the piezo voltage control of magnetization orientation is directly transferable to other ferromagnetic/piezoelectric hybrid structures, paving the way to innovative multifunctional device concepts. As an example, we demonstrate piezo voltage-induced irreversible magnetization switching at T=40 K, which constitutes the basic principle of a nonvolatile memory element. Brandt, Martin S. Limmer, Wolfgang terms-of-use Gönnenwein, Sebastian T. B. Althammer, Matthias 2021-03-09T08:39:43Z Schoch, Wladimir Geprägs, Stephan Limmer, Wolfgang Brandt, Martin S. Geprägs, Stephan Brandlmaier, Andreas Gross, Rudolf Bihler, Christoph Weiler, Mathias

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