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Electron spin resonance of Zn<sub>1−x</sub>Mg<sub>x</sub>O thin films grown by plasma-assisted molecular beam epitaxy

Electron spin resonance of Zn1−xMgxO thin films grown by plasma-assisted molecular beam epitaxy

Type of Publication: Journal article
Publication status: Published
Author: Wassner, Thomas A.; Laumer, Bernhard; Althammer, Matthias; Gönnenwein, Sebastian T. B.; Stutzmann, Martin; Eickhoff, Martin; Brandt, Martin S.
Year of publication: 2010
Published in: Applied Physics Letters ; 97 (2010), 9. - 092102. - American Institute of Physics (AIP). - ISSN 0003-6951. - eISSN 1077-3118
DOI (citable link): https://dx.doi.org/10.1063/1.3477951
Summary:
Zn1−xMgxO thin films with a Mg content x between 0 and 0.42 grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates were investigated by electron spin resonance at 5 K. Above band gap illumination induces a persistent resonance signal, which is attributed to free conduction band electrons. The g-factors of the Zn1−xMgxO epitaxial layers and their anisotropy were determined experimentally and an increase from g∥=1.957 for x=0 to g∥=1.970 for x=0.42 was found, accompanied by a decrease in anisotropy. A comparison with g-factors of the AlxGa1−xN system is also given.
Subject (DDC): 530 Physics
Refereed: Yes

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WASSNER, Thomas A., Bernhard LAUMER, Matthias ALTHAMMER, Sebastian T. B. GÖNNENWEIN, Martin STUTZMANN, Martin EICKHOFF, Martin S. BRANDT, 2010. Electron spin resonance of Zn1−xMgxO thin films grown by plasma-assisted molecular beam epitaxy. In: Applied Physics Letters. American Institute of Physics (AIP). 97(9), 092102. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.3477951

@article{Wassner2010Elect-53063, title={Electron spin resonance of Zn1−xMgxO thin films grown by plasma-assisted molecular beam epitaxy}, year={2010}, doi={10.1063/1.3477951}, number={9}, volume={97}, issn={0003-6951}, journal={Applied Physics Letters}, author={Wassner, Thomas A. and Laumer, Bernhard and Althammer, Matthias and Gönnenwein, Sebastian T. B. and Stutzmann, Martin and Eickhoff, Martin and Brandt, Martin S.}, note={Article Number: 092102} }

Gönnenwein, Sebastian T. B. 2010 Zn<sub>1−x</sub>Mg<sub>x</sub>O thin films with a Mg content x between 0 and 0.42 grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates were investigated by electron spin resonance at 5 K. Above band gap illumination induces a persistent resonance signal, which is attributed to free conduction band electrons. The g-factors of the Zn<sub>1−x</sub>Mg<sub>x</sub>O epitaxial layers and their anisotropy were determined experimentally and an increase from g∥=1.957 for x=0 to g∥=1.970 for x=0.42 was found, accompanied by a decrease in anisotropy. A comparison with g-factors of the Al<sub>x</sub>Ga<sub>1−x</sub>N system is also given. Gönnenwein, Sebastian T. B. Stutzmann, Martin Eickhoff, Martin eng Wassner, Thomas A. terms-of-use 2021-03-03T10:08:21Z Brandt, Martin S. Electron spin resonance of Zn<sub>1−x</sub>Mg<sub>x</sub>O thin films grown by plasma-assisted molecular beam epitaxy Wassner, Thomas A. Laumer, Bernhard Eickhoff, Martin Althammer, Matthias Althammer, Matthias Stutzmann, Martin Laumer, Bernhard Brandt, Martin S. 2021-03-03T10:08:21Z

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