## Subpicosecond carrier transport in GaAs surface-space-charge fields

1993
Pfeifer, Torsten
Kütt, Waldemar
Kurz, Heinrich
Journal article
##### Published in
Physical Review B ; 47 (1993), 7. - pp. 3842-3849
##### Abstract
Above-band-gap pulsed optical excitation of electron-hole pairs within the surface-space-charge region of semiconductors alters the surface-space-charge field via free-carrier transport. We report on the direct observation of this ultrafast transient screening and the associated charge-carrier transport by applying reflective electro-optic sampling (REOS) with subpicosecond time resolution to (100)-oriented GaAs surfaces. The REOS measurements performed under different initial surface field conditions and various optical excitation densities are compared to numerical simulations of hot-carrier transport, including the calculation of the optical response. The simulations, which are based on a simple drift-diffusion model for optically excited electron-hole pairs, are in quantitative agreement with the experiment. The strength and sign of the static built-in field can be determined and the carrier drift velocities can be derived on a subpicosecond time scale.
530 Physics
##### Cite This
ISO 690DEKORSY, Thomas, Torsten PFEIFER, Waldemar KÜTT, Heinrich KURZ, 1993. Subpicosecond carrier transport in GaAs surface-space-charge fields. In: Physical Review B. 47(7), pp. 3842-3849. Available under: doi: 10.1103/PhysRevB.47.3842
BibTex
@article{Dekorsy1993Subpi-5299,
year={1993},
doi={10.1103/PhysRevB.47.3842},
title={Subpicosecond carrier transport in GaAs surface-space-charge fields},
number={7},
volume={47},
journal={Physical Review B},
pages={3842--3849},
author={Dekorsy, Thomas and Pfeifer, Torsten and Kütt, Waldemar and Kurz, Heinrich}
}

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<dcterms:abstract xml:lang="eng">Above-band-gap pulsed optical excitation of electron-hole pairs within the surface-space-charge region of semiconductors alters the surface-space-charge field via free-carrier transport. We report on the direct observation of this ultrafast transient screening and the associated charge-carrier transport by applying reflective electro-optic sampling (REOS) with subpicosecond time resolution to (100)-oriented GaAs surfaces. The REOS measurements performed under different initial surface field conditions and various optical excitation densities are compared to numerical simulations of hot-carrier transport, including the calculation of the optical response. The simulations, which are based on a simple drift-diffusion model for optically excited electron-hole pairs, are in quantitative agreement with the experiment. The strength and sign of the static built-in field can be determined and the carrier drift velocities can be derived on a subpicosecond time scale.</dcterms:abstract>
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