Subpicosecond carrier transport in GaAs surface-space-charge fields

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DEKORSY, Thomas, Torsten PFEIFER, Waldemar KÜTT, Heinrich KURZ, 1993. Subpicosecond carrier transport in GaAs surface-space-charge fields. In: Physical Review B. 47(7), pp. 3842-3849

@article{Dekorsy1993Subpi-5299, title={Subpicosecond carrier transport in GaAs surface-space-charge fields}, year={1993}, doi={10.1103/PhysRevB.47.3842}, number={7}, volume={47}, journal={Physical Review B}, pages={3842--3849}, author={Dekorsy, Thomas and Pfeifer, Torsten and Kütt, Waldemar and Kurz, Heinrich} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/5299"> <dcterms:title>Subpicosecond carrier transport in GaAs surface-space-charge fields</dcterms:title> <dc:language>eng</dc:language> <dc:rights>deposit-license</dc:rights> <dc:format>application/pdf</dc:format> <dc:contributor>Pfeifer, Torsten</dc:contributor> <dc:creator>Kurz, Heinrich</dc:creator> <dcterms:bibliographicCitation>First publ. in: Physical Review B 47 (1993), 7, pp. 3842-3849</dcterms:bibliographicCitation> <dc:contributor>Kurz, Heinrich</dc:contributor> <dcterms:rights rdf:resource="https://creativecommons.org/licenses/by-nc-nd/2.0/legalcode"/> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:54:45Z</dcterms:available> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:54:45Z</dc:date> <dc:creator>Pfeifer, Torsten</dc:creator> <dc:contributor>Dekorsy, Thomas</dc:contributor> <dcterms:abstract xml:lang="eng">Above-band-gap pulsed optical excitation of electron-hole pairs within the surface-space-charge region of semiconductors alters the surface-space-charge field via free-carrier transport. We report on the direct observation of this ultrafast transient screening and the associated charge-carrier transport by applying reflective electro-optic sampling (REOS) with subpicosecond time resolution to (100)-oriented GaAs surfaces. The REOS measurements performed under different initial surface field conditions and various optical excitation densities are compared to numerical simulations of hot-carrier transport, including the calculation of the optical response. The simulations, which are based on a simple drift-diffusion model for optically excited electron-hole pairs, are in quantitative agreement with the experiment. The strength and sign of the static built-in field can be determined and the carrier drift velocities can be derived on a subpicosecond time scale.</dcterms:abstract> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/5299"/> <dc:creator>Kütt, Waldemar</dc:creator> <dcterms:issued>1993</dcterms:issued> <dc:contributor>Kütt, Waldemar</dc:contributor> <dc:creator>Dekorsy, Thomas</dc:creator> </rdf:Description> </rdf:RDF>

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