Transmission increase upon switching VO2 thin films on microstructured surfaces

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2007
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Karakurt, Ismail
Lopez, Rene
Halabica, Andrej
Haglund, Richard
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Applied Physics Letters ; 91 (2007). - 091907
Abstract
The authors compare transmission measurements of near-infrared light through VO2 thin films on smooth substrates and on ordered arrays of silica microspheres. When the samples are heated above the critical temperature for the semiconductor-metallic phase transition, smooth thin films show reduced transmission independent of thickness: however, the VO2 film deposited on the microspheres may show either reduced or enhanced transmission, depending on VO2 film thickness. They show that this at a first glance, unexpected behavior is directly related to the change of scattering efficiency upon the phase transition. This suggests that optical transmission through thin-film microstructures could be tuned by an appropriate combination of microsphere ordering and VO2 film thickness.
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530 Physics
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transmission,switching,microstructure
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ISO 690KARAKURT, Ismail, Johannes BONEBERG, Paul LEIDERER, Rene LOPEZ, Andrej HALABICA, Richard HAGLUND, 2007. Transmission increase upon switching VO2 thin films on microstructured surfaces. In: Applied Physics Letters. 91, 091907. Available under: doi: 10.1063/1.2776368
BibTex
@article{Karakurt2007Trans-5298,
  year={2007},
  doi={10.1063/1.2776368},
  title={Transmission increase upon switching VO2 thin films on microstructured surfaces},
  volume={91},
  journal={Applied Physics Letters},
  author={Karakurt, Ismail and Boneberg, Johannes and Leiderer, Paul and Lopez, Rene and Halabica, Andrej and Haglund, Richard},
  note={Article Number: 091907}
}
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