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DX-behavior of Si in AlN

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ZEISEL, Roland, Martin W. BAYERL, Sebastian T. B. GÖNNENWEIN, Roman DIMITROV, Oliver AMBACHER, Martin S. BRANDT, Martin STUTZMANN, 2000. DX-behavior of Si in AlN. In: Physical Review B. American Physical Society (APS). 61(24), R16283. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.61.R16283

@article{Zeisel2000DXbeh-52804, title={DX-behavior of Si in AlN}, year={2000}, doi={10.1103/PhysRevB.61.R16283}, number={24}, volume={61}, issn={2469-9950}, journal={Physical Review B}, author={Zeisel, Roland and Bayerl, Martin W. and Gönnenwein, Sebastian T. B. and Dimitrov, Roman and Ambacher, Oliver and Brandt, Martin S. and Stutzmann, Martin}, note={Article Number: R16283} }

<rdf:RDF xmlns:dcterms="" xmlns:dc="" xmlns:rdf="" xmlns:bibo="" xmlns:dspace="" xmlns:foaf="" xmlns:void="" xmlns:xsd="" > <rdf:Description rdf:about=""> <dcterms:rights rdf:resource=""/> <dcterms:title>DX-behavior of Si in AlN</dcterms:title> <dc:creator>Brandt, Martin S.</dc:creator> <dc:creator>Ambacher, Oliver</dc:creator> <dc:contributor>Gönnenwein, Sebastian T. B.</dc:contributor> <dc:creator>Bayerl, Martin W.</dc:creator> <dc:rights>terms-of-use</dc:rights> <dc:creator>Gönnenwein, Sebastian T. B.</dc:creator> <dc:contributor>Stutzmann, Martin</dc:contributor> <dc:contributor>Ambacher, Oliver</dc:contributor> <dcterms:abstract xml:lang="eng">In Si doped AlN, a large persistent photoconductivity is found for temperatures below 60 K after exposure to light with photon energies above 1.5 eV. Simultaneously, a persistent electron spin resonance signal is observed with an isotropic g factor of 1.9885 due to an effective mass donor state, while no spin resonance signal is detectable after cooling the sample in the dark. Both observations show that Si undergoes a DX-like metastability in this material. Based on the experimental findings, a detailed configuration diagram is proposed.</dcterms:abstract> <dc:creator>Dimitrov, Roman</dc:creator> <dc:contributor>Bayerl, Martin W.</dc:contributor> <dcterms:isPartOf rdf:resource=""/> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dcterms:available rdf:datatype="">2021-02-11T12:42:09Z</dcterms:available> <dspace:isPartOfCollection rdf:resource=""/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:contributor>Dimitrov, Roman</dc:contributor> <dc:language>eng</dc:language> <dcterms:issued>2000</dcterms:issued> <dc:date rdf:datatype="">2021-02-11T12:42:09Z</dc:date> <dc:contributor>Brandt, Martin S.</dc:contributor> <dc:creator>Zeisel, Roland</dc:creator> <dc:creator>Stutzmann, Martin</dc:creator> <bibo:uri rdf:resource=""/> <dc:contributor>Zeisel, Roland</dc:contributor> </rdf:Description> </rdf:RDF>

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