DX-behavior of Si in AlN
| Type of Publication: | Journal article |
| Publication status: | Published |
| Author: | Zeisel, Roland; Bayerl, Martin W.; Gönnenwein, Sebastian T. B.; Dimitrov, Roman; Ambacher, Oliver; Brandt, Martin S.; Stutzmann, Martin |
| Year of publication: | 2000 |
| Published in: | Physical Review B ; 61 (2000), 24. - R16283. - American Physical Society (APS). - ISSN 2469-9950. - eISSN 2469-9969 |
| DOI (citable link): | https://dx.doi.org/10.1103/PhysRevB.61.R16283 |
| Summary: |
In Si doped AlN, a large persistent photoconductivity is found for temperatures below 60 K after exposure to light with photon energies above 1.5 eV. Simultaneously, a persistent electron spin resonance signal is observed with an isotropic g factor of 1.9885 due to an effective mass donor state, while no spin resonance signal is detectable after cooling the sample in the dark. Both observations show that Si undergoes a DX-like metastability in this material. Based on the experimental findings, a detailed configuration diagram is proposed.
|
| Subject (DDC): | 530 Physics |
| Refereed: | Yes |
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ZEISEL, Roland, Martin W. BAYERL, Sebastian T. B. GÖNNENWEIN, Roman DIMITROV, Oliver AMBACHER, Martin S. BRANDT, Martin STUTZMANN, 2000. DX-behavior of Si in AlN. In: Physical Review B. American Physical Society (APS). 61(24), R16283. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.61.R16283
@article{Zeisel2000DXbeh-52804, title={DX-behavior of Si in AlN}, year={2000}, doi={10.1103/PhysRevB.61.R16283}, number={24}, volume={61}, issn={2469-9950}, journal={Physical Review B}, author={Zeisel, Roland and Bayerl, Martin W. and Gönnenwein, Sebastian T. B. and Dimitrov, Roman and Ambacher, Oliver and Brandt, Martin S. and Stutzmann, Martin}, note={Article Number: R16283} }
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