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Noise-detected magnetic resonance experiments in amorphous hydrogenated silicon

Noise-detected magnetic resonance experiments in amorphous hydrogenated silicon

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GÖNNENWEIN, Sebastian T. B., Martin W. BAYERL, Martin S. BRANDT, Martin STUTZMANN, 2000. Noise-detected magnetic resonance experiments in amorphous hydrogenated silicon. In: Journal of Non-Crystalline Solids. Elsevier. 266-269(Part 1), pp. 237-241. ISSN 0022-3093. eISSN 1873-4812. Available under: doi: 10.1016/S0022-3093(99)00828-5

@article{Gonnenwein2000Noise-52653, title={Noise-detected magnetic resonance experiments in amorphous hydrogenated silicon}, year={2000}, doi={10.1016/S0022-3093(99)00828-5}, number={Part 1}, volume={266-269}, issn={0022-3093}, journal={Journal of Non-Crystalline Solids}, pages={237--241}, author={Gönnenwein, Sebastian T. B. and Bayerl, Martin W. and Brandt, Martin S. and Stutzmann, Martin} }

eng Bayerl, Martin W. Bayerl, Martin W. Brandt, Martin S. The microscopic origin of electronic noise in intrinsic amorphous hydrogenated silicon (a-Si:H) is studied with noise-detected magnetic resonance (NDMR). This measurement technique, combining conventional noise spectroscopy and electron paramagnetic resonance (EPR), allows the identification of paramagnetic states involved in transport processes underlying electronic noise. The sensitivity of the setup is discussed and shown to be at the fundamental limit within a factor of 2. The NDMR results obtained from Cr-n<sup>+</sup>-i-n<sup>+</sup>-Cr a-Si:H sandwich structures show that holes in the valence band tail play a dominant role in the generation of low-frequency non-thermal noise in intrinsic a-Si:H. Gönnenwein, Sebastian T. B. Stutzmann, Martin 2000 Gönnenwein, Sebastian T. B. 2021-02-01T10:53:03Z Brandt, Martin S. 2021-02-01T10:53:03Z terms-of-use Noise-detected magnetic resonance experiments in amorphous hydrogenated silicon Stutzmann, Martin

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