Electroelastic Hyperfine Tuning of Phosphorus Donors in Silicon

Type of Publication: Journal article
Publication status: Published
Author: Dreher, Lukas; Hilker, Timon A.; Brandlmaier, Andreas; Gönnenwein, Sebastian T. B.; Huebl, Hans; Stutzmann, Martin; Brandt, Martin S.
Year of publication: 2011
Published in: Physical Review Letters ; 106 (2011), 3. - 037601. - American Physical Society (APS). - ISSN 0031-9007. - eISSN 1079-7114
Pubmed ID: 21405299
DOI (citable link): https://dx.doi.org/10.1103/PhysRevLett.106.037601
Summary:
We demonstrate an electroelastic control of the hyperfine interaction between nuclear and electronic spins opening an alternative way to address and couple spin-based qubits. The hyperfine interaction is measured by electrically detected magnetic resonance in phosphorus-doped silicon epitaxial layers employing a hybrid structure consisting of a silicon-germanium virtual substrate and a piezoelectric actuator. By applying a voltage to the actuator, the hyperfine interaction is changed by up to 0.9 MHz, which would be enough to shift the phosphorus donor electron spin out of resonance by more than one linewidth in isotopically purified 28Si.
Subject (DDC): 530 Physics
Refereed: Yes

Cite This

Files in this item

Files Size Format View

There are no files associated with this item.

DREHER, Lukas, Timon A. HILKER, Andreas BRANDLMAIER, Sebastian T. B. GÖNNENWEIN, Hans HUEBL, Martin STUTZMANN, Martin S. BRANDT, 2011. Electroelastic Hyperfine Tuning of Phosphorus Donors in Silicon. In: Physical Review Letters. American Physical Society (APS). 106(3), 037601. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.106.037601

@article{Dreher2011-01-21Elect-52610, title={Electroelastic Hyperfine Tuning of Phosphorus Donors in Silicon}, year={2011}, doi={10.1103/PhysRevLett.106.037601}, number={3}, volume={106}, issn={0031-9007}, journal={Physical Review Letters}, author={Dreher, Lukas and Hilker, Timon A. and Brandlmaier, Andreas and Gönnenwein, Sebastian T. B. and Huebl, Hans and Stutzmann, Martin and Brandt, Martin S.}, note={Article Number: 037601} }

Stutzmann, Martin Gönnenwein, Sebastian T. B. Brandlmaier, Andreas eng Gönnenwein, Sebastian T. B. Brandt, Martin S. Huebl, Hans terms-of-use Dreher, Lukas Brandt, Martin S. 2021-01-29T10:22:15Z Electroelastic Hyperfine Tuning of Phosphorus Donors in Silicon Hilker, Timon A. 2021-01-29T10:22:15Z We demonstrate an electroelastic control of the hyperfine interaction between nuclear and electronic spins opening an alternative way to address and couple spin-based qubits. The hyperfine interaction is measured by electrically detected magnetic resonance in phosphorus-doped silicon epitaxial layers employing a hybrid structure consisting of a silicon-germanium virtual substrate and a piezoelectric actuator. By applying a voltage to the actuator, the hyperfine interaction is changed by up to 0.9 MHz, which would be enough to shift the phosphorus donor electron spin out of resonance by more than one linewidth in isotopically purified <sup>28</sup>Si. 2011-01-21 Brandlmaier, Andreas Dreher, Lukas Huebl, Hans Hilker, Timon A. Stutzmann, Martin

This item appears in the following Collection(s)

Search KOPS


Browse

My Account