Generation–recombination noise of DX centers in AlN:Si
| Type of Publication: | Journal article |
| Publication status: | Published |
| Author: | Gönnenwein, Sebastian T. B.; Zeisel, Roland; Ambacher, Oliver; Brandt, Martin S.; Stutzmann, Martin; Baldovino, Silvia |
| Year of publication: | 2001 |
| Published in: | Applied Physics Letters ; 79 (2001), 15. - pp. 2396-2398. - American Institute of Physics (AIP). - ISSN 0003-6951. - eISSN 1077-3118 |
| DOI (citable link): | https://dx.doi.org/10.1063/1.1405426 |
| Summary: |
Generation–recombination noise is observed in Si-doped aluminum nitride (AlN:Si). Both the magnitude and the characteristic frequency of the generation–recombination noise power density are found to be thermally activated. Using a model based on charge carrier number fluctuations in a two-level system, transition energies and potential barriers of the DX center formed by Si donors in AlN are quantitatively determined.
|
| Subject (DDC): | 530 Physics |
| Refereed: | Yes |
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GÖNNENWEIN, Sebastian T. B., Roland ZEISEL, Oliver AMBACHER, Martin S. BRANDT, Martin STUTZMANN, Silvia BALDOVINO, 2001. Generation–recombination noise of DX centers in AlN:Si. In: Applied Physics Letters. American Institute of Physics (AIP). 79(15), pp. 2396-2398. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.1405426
@article{Gonnenwein2001Gener-52556, title={Generation–recombination noise of DX centers in AlN:Si}, year={2001}, doi={10.1063/1.1405426}, number={15}, volume={79}, issn={0003-6951}, journal={Applied Physics Letters}, pages={2396--2398}, author={Gönnenwein, Sebastian T. B. and Zeisel, Roland and Ambacher, Oliver and Brandt, Martin S. and Stutzmann, Martin and Baldovino, Silvia} }
<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/52556"> <dc:creator>Stutzmann, Martin</dc:creator> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dcterms:issued>2001</dcterms:issued> <dc:contributor>Gönnenwein, Sebastian T. B.</dc:contributor> <dc:creator>Brandt, Martin S.</dc:creator> <dc:contributor>Zeisel, Roland</dc:contributor> <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/52556"/> <dc:contributor>Ambacher, Oliver</dc:contributor> <dc:creator>Baldovino, Silvia</dc:creator> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:creator>Gönnenwein, Sebastian T. B.</dc:creator> <dc:language>eng</dc:language> <dc:rights>terms-of-use</dc:rights> <dc:contributor>Stutzmann, Martin</dc:contributor> <dcterms:abstract xml:lang="eng">Generation–recombination noise is observed in Si-doped aluminum nitride (AlN:Si). Both the magnitude and the characteristic frequency of the generation–recombination noise power density are found to be thermally activated. Using a model based on charge carrier number fluctuations in a two-level system, transition energies and potential barriers of the DX center formed by Si donors in AlN are quantitatively determined.</dcterms:abstract> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2021-01-26T08:34:17Z</dcterms:available> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2021-01-26T08:34:17Z</dc:date> <dc:creator>Zeisel, Roland</dc:creator> <dcterms:title>Generation–recombination noise of DX centers in AlN:Si</dcterms:title> <dc:creator>Ambacher, Oliver</dc:creator> <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:contributor>Baldovino, Silvia</dc:contributor> <dc:contributor>Brandt, Martin S.</dc:contributor> </rdf:Description> </rdf:RDF>
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