Pure spin current transport in gallium doped zinc oxide

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ALTHAMMER, Matthias, Joynarayan MUKHERJEE, Stephan GEPRÄGS, Sebastian T. B. GÖNNENWEIN, Matthias OPEL, M. S. RAMACHANDRA RAO, Rudolf GROSS, 2017. Pure spin current transport in gallium doped zinc oxide. In: Applied Physics Letters. American Institute of Physics (AIP). 110(5), 052403. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.4975372

@article{Althammer2017curre-52428, title={Pure spin current transport in gallium doped zinc oxide}, year={2017}, doi={10.1063/1.4975372}, number={5}, volume={110}, issn={0003-6951}, journal={Applied Physics Letters}, author={Althammer, Matthias and Mukherjee, Joynarayan and Geprägs, Stephan and Gönnenwein, Sebastian T. B. and Opel, Matthias and Ramachandra Rao, M. S. and Gross, Rudolf}, note={Article Number: 052403} }

<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/52428"> <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/52428"/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:creator>Geprägs, Stephan</dc:creator> <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/> <dc:contributor>Geprägs, Stephan</dc:contributor> <dc:creator>Mukherjee, Joynarayan</dc:creator> <dc:rights>terms-of-use</dc:rights> <dcterms:issued>2017</dcterms:issued> <dc:contributor>Ramachandra Rao, M. S.</dc:contributor> <dc:language>eng</dc:language> <dc:creator>Gross, Rudolf</dc:creator> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dc:creator>Gönnenwein, Sebastian T. B.</dc:creator> <dc:contributor>Opel, Matthias</dc:contributor> <dcterms:title>Pure spin current transport in gallium doped zinc oxide</dcterms:title> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2021-01-14T13:03:47Z</dc:date> <dc:contributor>Mukherjee, Joynarayan</dc:contributor> <dcterms:abstract xml:lang="eng">We study the flow of a pure spin current through zinc oxide by measuring the spin Hall magnetoresistance (SMR) in thin film trilayer samples consisting of bismuth-substituted yttrium iron garnet (Bi:YIG), gallium-doped zinc oxide (Ga:ZnO), and platinum. We investigate the dependence of the SMR magnitude on the thickness of the Ga:ZnO interlayer and compare to a Bi:YIG/Pt bilayer. We find that the SMR magnitude is reduced by almost one order of magnitude upon inserting a Ga:ZnO interlayer and continuously decreases with increasing interlayer thickness. Nevertheless, the SMR stays finite even for a 12 nm thick Ga:ZnO interlayer. These results show that a pure spin current indeed can propagate through a several nm-thick degenerately doped zinc oxide layer. We also observe differences in both the temperature and the field dependence of the SMR when comparing tri- and bilayers. Finally, we compare our data to the predictions of a model based on spin diffusion. This shows that interface resistances play a crucial role for the SMR magnitude in these trilayer structures.</dcterms:abstract> <dc:creator>Opel, Matthias</dc:creator> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:creator>Althammer, Matthias</dc:creator> <dc:creator>Ramachandra Rao, M. S.</dc:creator> <dc:contributor>Gönnenwein, Sebastian T. B.</dc:contributor> <dc:contributor>Althammer, Matthias</dc:contributor> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2021-01-14T13:03:47Z</dcterms:available> <dc:contributor>Gross, Rudolf</dc:contributor> </rdf:Description> </rdf:RDF>

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