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Enhanced Ferroelectric Polarization in TiN/HfO<sub>2</sub>/TiN Capacitors by Interface Design

Enhanced Ferroelectric Polarization in TiN/HfO2/TiN Capacitors by Interface Design

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SZYJKA, Thomas, Lutz BAUMGARTEN, Terence MITTMANN, Yury MATVEYEV, Christoph SCHLUETER, Thomas MIKOLAJICK, Uwe SCHROEDER, Martina MÜLLER, 2020. Enhanced Ferroelectric Polarization in TiN/HfO2/TiN Capacitors by Interface Design. In: ACS Applied Electronic Materials. ACS Publications. 2(10), pp. 3152-3159. eISSN 2637-6113. Available under: doi: 10.1021/acsaelm.0c00503

@article{Szyjka2020Enhan-52382, title={Enhanced Ferroelectric Polarization in TiN/HfO2/TiN Capacitors by Interface Design}, year={2020}, doi={10.1021/acsaelm.0c00503}, number={10}, volume={2}, journal={ACS Applied Electronic Materials}, pages={3152--3159}, author={Szyjka, Thomas and Baumgarten, Lutz and Mittmann, Terence and Matveyev, Yury and Schlueter, Christoph and Mikolajick, Thomas and Schroeder, Uwe and Müller, Martina} }

Szyjka, Thomas Mittmann, Terence Mikolajick, Thomas 2021-01-13T14:25:34Z Müller, Martina Szyjka, Thomas Enhanced Ferroelectric Polarization in TiN/HfO<sub>2</sub>/TiN Capacitors by Interface Design 2020 Baumgarten, Lutz Baumgarten, Lutz eng Müller, Martina Schlueter, Christoph terms-of-use Schlueter, Christoph Matveyev, Yury Matveyev, Yury Mikolajick, Thomas 2021-01-13T14:25:34Z Schroeder, Uwe Mittmann, Terence Schroeder, Uwe The interface formation between ferroelectric HfO<sub>2</sub> layers and TiN bottom electrodes was studied by hard X-ray photoelectron spectroscopy and directly correlated to the electric polarization characteristics of the TiN/HfO<sub>2</sub>/TiN capacitors. We consistently deduced the interface chemistry from HfO<sub>2</sub>- and TiN-related core levels, dependent on the oxygen flow ṁ supplied before and during physical vapor deposition (PVD) growth of HfO<sub>2</sub>. The results underline the critical, twofold impact of oxygen supply on HfO<sub>2</sub> and interface properties. When supplied before growth, the supplied oxygen stabilizes the TiN/HfO<sub>2</sub> interface by oxidation and formation of a self-limiting (noninsulating) TiO<sub>2</sub> intralayer. When supplied during growth, on the other hand, oxygen flows above a critical threshold reduce the oxygen vacancy concentration within the HfO<sub>2</sub> film. We reveal a direct relation between the maximum ferroelectric remanent polarization and a critical threshold PVD oxygen exposure flow rate. The results allow for advancement of the PVD growth process in terms of a more flexible design of the ferroelectric HfO<sub>2</sub> films with chemically stable TiN interfaces.

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