Topological Hall effect in thin films of Mn1.5PtSn

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SWEKIS, Peter, Anastasios MARKOU, Dominik KRIEGNER, Jacob GAYLES, Richard SCHLITZ, Walter SCHNELLE, Sebastian T. B. GÖNNENWEIN, Claudia FELSER, 2018. Topological Hall effect in thin films of Mn1.5PtSn. In: Physical Review Materials. American Physical Society (APS). 3(1), 013001(R). eISSN 2475-9953. Available under: doi: 10.1103/PhysRevMaterials.3.013001

@article{Swekis2018-10-18T18:44:40ZTopol-52285, title={Topological Hall effect in thin films of Mn1.5PtSn}, year={2018}, doi={10.1103/PhysRevMaterials.3.013001}, number={1}, volume={3}, journal={Physical Review Materials}, author={Swekis, Peter and Markou, Anastasios and Kriegner, Dominik and Gayles, Jacob and Schlitz, Richard and Schnelle, Walter and Gönnenwein, Sebastian T. B. and Felser, Claudia}, note={Article Number: 013001(R)} }

2018-10-18T18:44:40Z Kriegner, Dominik 2021-01-05T10:37:27Z 2021-01-05T10:37:27Z Gönnenwein, Sebastian T. B. Kriegner, Dominik Schnelle, Walter Topological Hall effect in thin films of Mn<sub>1.5</sub>PtSn Swekis, Peter Gayles, Jacob Markou, Anastasios Attribution 4.0 International Felser, Claudia Spin chirality in metallic materials with non-coplanar magnetic order can give rise to a Berry phase induced topological Hall effect. Here, we report the observation of a large topological Hall effect in high-quality films of Mn<sub>1.5</sub>PtSn that were grown by means of magnetron sputtering on MgO(001). The topological Hall resistivity is present up to μ<sub>0</sub>H≈4T below the spin reorientation transition temperature, T<sub>s</sub>=185 K. We find that the maximum topological Hall resistivity is of comparable magnitude as the anomalous Hall resistivity. Owing to the size, the topological Hall effect is directly evident prior to the customarily performed subtraction of magnetometry data. Further, we underline the robustness of the topological Hall effect in Mn<sub>2−x</sub>PtSn by extracting the effect for multiple stoichiometries (x=0.5,0.25,0.1) and film thicknesses (t=104,52,35 nm) with maximum topological Hall resistivities between 0.76 and 1.55μΩcm at 150 K. Gayles, Jacob eng Schnelle, Walter Markou, Anastasios Gönnenwein, Sebastian T. B. Swekis, Peter Schlitz, Richard Schlitz, Richard Felser, Claudia

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