3He impurity effects on the growth kinetics of 4He crystals

Zitieren

Dateien zu dieser Ressource

Prüfsumme: MD5:82707b8e075df22361ed5899f9498f24

SUZUKI, M., M. THIEL, Paul LEIDERER, 1997. 3He impurity effects on the growth kinetics of 4He crystals. In: Journal of Low Temperature Physics. 109(1-2), pp. 357-367

@article{Suzuki1997impur-5202, title={3He impurity effects on the growth kinetics of 4He crystals}, year={1997}, doi={10.1007/s10909-005-0090-4}, number={1-2}, volume={109}, journal={Journal of Low Temperature Physics}, pages={357--367}, author={Suzuki, M. and Thiel, M. and Leiderer, Paul} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/5202"> <dc:rights>deposit-license</dc:rights> <dcterms:bibliographicCitation>First publ. in: Journal of Low Temperature Physics 109 (1997), 1-2, pp. 357-367</dcterms:bibliographicCitation> <dc:language>eng</dc:language> <dcterms:abstract xml:lang="eng">We report the growth kinetics of the 4He crystals with a small amount of 3He impurities around 0.8 K. The growth resistance was measured using the response of the charged interface with respect to an externally applied voltage. In 5ppm and lOppm 3He mixtures, it is found that ( 1 ) the relaxation process can be expressed as an exponential behavior, (2) the growth resistance becomes larger compared to pure 4He and does not have a strong 3He concentration dependence, and (3) the temperature dependence of the growth resistance is much the same as pure 4He. We discuss several possible explanations of the present experiment.</dcterms:abstract> <dc:creator>Leiderer, Paul</dc:creator> <dc:contributor>Leiderer, Paul</dc:contributor> <dc:creator>Thiel, M.</dc:creator> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:53:58Z</dcterms:available> <dc:creator>Suzuki, M.</dc:creator> <dc:contributor>Suzuki, M.</dc:contributor> <dc:format>application/pdf</dc:format> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:53:58Z</dc:date> <dcterms:rights rdf:resource="https://creativecommons.org/licenses/by-nc-nd/2.0/legalcode"/> <dcterms:issued>1997</dcterms:issued> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/5202"/> <dcterms:title>3He impurity effects on the growth kinetics of 4He crystals</dcterms:title> <dc:contributor>Thiel, M.</dc:contributor> </rdf:Description> </rdf:RDF>

Dateiabrufe seit 01.10.2014 (Informationen über die Zugriffsstatistik)

220_jlowtempph_1997.pdf 85

Das Dokument erscheint in:

deposit-license Solange nicht anders angezeigt, wird die Lizenz wie folgt beschrieben: deposit-license

KOPS Suche


Stöbern

Mein Benutzerkonto