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All Electrical Access to Topological Transport Features in Mn<sub>1.8</sub>PtSn Films

All Electrical Access to Topological Transport Features in Mn1.8PtSn Films

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SCHLITZ, Richard, Peter SWEKIS, Anastasios MARKOU, Helena REICHLOVA, Michaela LAMMEL, Jacob GAYLES, Andy THOMAS, Kornelius NIELSCH, Claudia FELSER, Sebastian T. P. GÖNNENWEIN, 2019. All Electrical Access to Topological Transport Features in Mn1.8PtSn Films. In: Nano Letters. American Chemical Society (ACS). 19(4), pp. 2366-2370. ISSN 1530-6984. eISSN 1530-6992. Available under: doi: 10.1021/acs.nanolett.8b05042

@article{Schlitz2019Elect-51834, title={All Electrical Access to Topological Transport Features in Mn1.8PtSn Films}, year={2019}, doi={10.1021/acs.nanolett.8b05042}, number={4}, volume={19}, issn={1530-6984}, journal={Nano Letters}, pages={2366--2370}, author={Schlitz, Richard and Swekis, Peter and Markou, Anastasios and Reichlova, Helena and Lammel, Michaela and Gayles, Jacob and Thomas, Andy and Nielsch, Kornelius and Felser, Claudia and Gönnenwein, Sebastian T. P.} }

Thomas, Andy Swekis, Peter Reichlova, Helena Schlitz, Richard Gayles, Jacob 2019 Nielsch, Kornelius Swekis, Peter All Electrical Access to Topological Transport Features in Mn<sub>1.8</sub>PtSn Films 2020-11-17T13:31:43Z Felser, Claudia eng terms-of-use 2020-11-17T13:31:43Z Gayles, Jacob Nielsch, Kornelius Markou, Anastasios Gönnenwein, Sebastian T. P. Lammel, Michaela Lammel, Michaela Felser, Claudia Thomas, Andy Reichlova, Helena Gönnenwein, Sebastian T. P. Schlitz, Richard The presence of nontrivial magnetic topology can give rise to nonvanishing scalar spin chirality and consequently a topological Hall or Nernst effect. In turn, topological transport signals can serve as indicators for topological spin structures. This is particularly important in thin films or nanopatterned materials where the spin structure is not readily accessible. Conventionally, the topological response is determined by combining magnetotransport data with an independent magnetometry experiment. This approach is prone to introduce measurement artifacts. In this study, we report the observation of large topological Hall and Nernst effects in micropatterned thin films of Mn<sub>1.8</sub>PtSn below the spin reorientation temperature T<sub>SR</sub> ≈ 190 K. The magnitude of the topological Hall effect ρ<sub>xy</sub><sup>T</sup> = 8 nΩm is close to the value reported in bulk Mn2PtSn, and the topological Nernst effect S<sub>xy</sub><sup>T </sup>= 115 nV K<sup>-1</sup> measured in the same microstructure has a similar magnitude as reported for bulk MnGe ( S<sub>xy</sub><sup>T</sup> ∼ 150 nV K<sup>-1</sup>), the only other material where a topological Nernst was reported. We use our data as a model system to introduce a topological quantity, which allows one to detect the presence of topological transport effects without the need for independent magnetometry data. Our approach thus enables the study of topological transport also in nanopatterned materials without detrimental magnetization related limitations. Markou, Anastasios

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