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Reducing LeTID with an Adjustment of the AlO<sub>x</sub>-SiN<sub>y</sub>:H layer system

Reducing LeTID with an Adjustment of the AlOx-SiNy:H layer system

Type of Publication: Contribution to a conference collection
Publication status: Published
URI (citable link): http://nbn-resolving.de/urn:nbn:de:bsz:352-2-13u4yxrup88tf0
Author: Schmid, Andreas; Fischer, Christian; Skorka, Daniel; Zuschlag, Annika; Hahn, Giso
Year of publication: 2020
Conference: 37th European Photovoltaic Solar Energy Conference and Exhibition (EUPVSEC) (online), Sep 7, 2020 - Sep 11, 2020
Published in: 37th European Photovoltaic Solar Energy Conference and Exhibition (EUPVSEC) : Proceedings. - München : WIP, 2020. - pp. 156-159. - eISSN 2196-100X. - ISBN 3-936338-73-6
URL of original publication: https://www.eupvsec-proceedings.com/proceedings?fulltext=hahn&paper=49208, Last access on Nov 6, 2020
Summary:
Light and elevated temperature induced degradation (LeTID) negatively impacts the lifetime and electronic characteristics of silicon (Si) solar cells. Even though the exact underlying mechanism of LeTID and subsequent regeneration are still unknown, LeTID formation seems to depend on the hydrogen content in the Si bulk. In this study, we compare the LeTID and subsequent regeneration behaviour of p-type Cz-Si and mc-Si samples with different AlOx/SiNy:H passivation layer systems under illumination (1 sun) and elevated temperature (130°C). Provided that atomic layer deposited AlOx can serve as diffusion barrier for hydrogen diffusing in the Si bulk from the SiNy:H layer during firing, we are able to change the hydrogen content by adjusting the AlOx layer thickness between 0 and 25 nm. Thus, we are able to show a reduction of LeTID by an adapted processing sequence without any losses in material quality.
Subject (DDC): 530 Physics
Link to License: In Copyright
Bibliography of Konstanz: Yes

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SCHMID, Andreas, Christian FISCHER, Daniel SKORKA, Annika ZUSCHLAG, Giso HAHN, 2020. Reducing LeTID with an Adjustment of the AlOx-SiNy:H layer system. 37th European Photovoltaic Solar Energy Conference and Exhibition (EUPVSEC) (online), Sep 7, 2020 - Sep 11, 2020. In: 37th European Photovoltaic Solar Energy Conference and Exhibition (EUPVSEC) : Proceedings. München:WIP, pp. 156-159. eISSN 2196-100X. ISBN 3-936338-73-6

@inproceedings{Schmid2020Reduc-51692, title={Reducing LeTID with an Adjustment of the AlOx-SiNy:H layer system}, url={https://www.eupvsec-proceedings.com/proceedings?fulltext=hahn&paper=49208}, year={2020}, isbn={3-936338-73-6}, address={München}, publisher={WIP}, booktitle={37th European Photovoltaic Solar Energy Conference and Exhibition (EUPVSEC) : Proceedings}, pages={156--159}, author={Schmid, Andreas and Fischer, Christian and Skorka, Daniel and Zuschlag, Annika and Hahn, Giso} }

Zuschlag, Annika 2020 terms-of-use Fischer, Christian Schmid, Andreas 2020-11-06T15:19:30Z Fischer, Christian Light and elevated temperature induced degradation (LeTID) negatively impacts the lifetime and electronic characteristics of silicon (Si) solar cells. Even though the exact underlying mechanism of LeTID and subsequent regeneration are still unknown, LeTID formation seems to depend on the hydrogen content in the Si bulk. In this study, we compare the LeTID and subsequent regeneration behaviour of p-type Cz-Si and mc-Si samples with different AlOx/SiNy:H passivation layer systems under illumination (1 sun) and elevated temperature (130°C). Provided that atomic layer deposited AlOx can serve as diffusion barrier for hydrogen diffusing in the Si bulk from the SiNy:H layer during firing, we are able to change the hydrogen content by adjusting the AlOx layer thickness between 0 and 25 nm. Thus, we are able to show a reduction of LeTID by an adapted processing sequence without any losses in material quality. Zuschlag, Annika eng Hahn, Giso Reducing LeTID with an Adjustment of the AlO<sub>x</sub>-SiN<sub>y</sub>:H layer system Skorka, Daniel Skorka, Daniel Hahn, Giso 2020-11-06T15:19:30Z Schmid, Andreas

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