KOPS - Das Institutionelle Repositorium der Universität Konstanz

Magnetoresistance of atomic-size contacts realized with mechanically controllable break junctions

Magnetoresistance of atomic-size contacts realized with mechanically controllable break junctions

Zitieren

Dateien zu dieser Ressource

Prüfsumme: MD5:350d7cff863156fff62f8cc30ae14a8e

EGLE, Stefan, Cecile BACCA, Hans-Fridtjof PERNAU, Magdalena HUEFNER, Denise HINZKE, Ulrich NOWAK, Elke SCHEER, 2010. Magnetoresistance of atomic-size contacts realized with mechanically controllable break junctions. In: Physical Review B. 81(13), 134402. Available under: doi: 10.1103/PhysRevB.81.134402

@article{Egle2010Magne-5085, title={Magnetoresistance of atomic-size contacts realized with mechanically controllable break junctions}, year={2010}, doi={10.1103/PhysRevB.81.134402}, number={13}, volume={81}, journal={Physical Review B}, author={Egle, Stefan and Bacca, Cecile and Pernau, Hans-Fridtjof and Huefner, Magdalena and Hinzke, Denise and Nowak, Ulrich and Scheer, Elke}, note={Article Number: 134402} }

Scheer, Elke We present a comprehensive study of the conductance behavior of atomic-size contacts made of ferromagnetic metals (Co) or noble metals (Au) with ferromagnetic electrodes (Co). In order to separate the influence of the large electrodes from the influence of the contacts themselves, we used different sample geometries. These include combinations of nonmagnetic electrodes connected to magnetic bridges and vice versa as well as different orientations of the magnetic field. The magnetoresistance (MR) curves show very rich behavior with strong MR ratios (MRR). In all geometries the MRR values are of comparable size, reaching up to a few thousand percent in the tunneling regime. We study the possible influence of the micromagnetic order of the domains in the vicinity of the contact as well as ballistic MR, giant MR, tunnel MR, atomically enhanced anisotropic MR (AAMR), and magnetostriction. We conclude that AAMR is the most important origin for the MR at high magnetic fields (|B|>2 T), while magnetostriction, tunnel MR, and giant MR govern the low-field regime (|B| First publ. in: Physical Review B, 81 (2010), 13, 134402 Bacca, Cecile 2010 Huefner, Magdalena Huefner, Magdalena Egle, Stefan application/pdf 2011-03-24T14:53:02Z Hinzke, Denise Hinzke, Denise Bacca, Cecile Egle, Stefan eng Magnetoresistance of atomic-size contacts realized with mechanically controllable break junctions Pernau, Hans-Fridtjof deposit-license Pernau, Hans-Fridtjof Nowak, Ulrich Nowak, Ulrich 2011-03-24T14:53:02Z Scheer, Elke

Dateiabrufe seit 01.10.2014 (Informationen über die Zugriffsstatistik)

Magnetoresistance_Egle.pdf 208

Das Dokument erscheint in:

KOPS Suche


Stöbern

Mein Benutzerkonto