Bound-exciton-induced current bistability in a silicon light-emitting diode

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SUN, Jiaming, Thomas DEKORSY, Wolfgang SKORUPA, Bernd SCHMIDT, Manfred HELM, 2003. Bound-exciton-induced current bistability in a silicon light-emitting diode. In: Applied Physics Letters. 82, pp. 2823-2825

@article{Sun2003Bound-5074, title={Bound-exciton-induced current bistability in a silicon light-emitting diode}, year={2003}, doi={10.1063/1.1570920}, volume={82}, journal={Applied Physics Letters}, pages={2823--2825}, author={Sun, Jiaming and Dekorsy, Thomas and Skorupa, Wolfgang and Schmidt, Bernd and Helm, Manfred} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/5074"> <dc:contributor>Sun, Jiaming</dc:contributor> <dcterms:bibliographicCitation>First publ. in: Applied Physics Letters 82 (2003), pp. 2823-2825</dcterms:bibliographicCitation> <dc:creator>Dekorsy, Thomas</dc:creator> <dc:creator>Sun, Jiaming</dc:creator> <dcterms:title>Bound-exciton-induced current bistability in a silicon light-emitting diode</dcterms:title> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:52:56Z</dcterms:available> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/5074"/> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:52:56Z</dc:date> <dcterms:issued>2003</dcterms:issued> <dcterms:rights rdf:resource="https://creativecommons.org/licenses/by-nc-nd/2.0/legalcode"/> <dc:creator>Skorupa, Wolfgang</dc:creator> <dc:language>eng</dc:language> <dc:contributor>Helm, Manfred</dc:contributor> <dc:format>application/pdf</dc:format> <dc:rights>deposit-license</dc:rights> <dc:creator>Schmidt, Bernd</dc:creator> <dc:contributor>Dekorsy, Thomas</dc:contributor> <dc:creator>Helm, Manfred</dc:creator> <dc:contributor>Schmidt, Bernd</dc:contributor> <dc:contributor>Skorupa, Wolfgang</dc:contributor> <dcterms:abstract xml:lang="eng">A bound-exciton-induced current bistability is observed under forward bias in an efficient silicon light-emitting diode at low temperatures. Two stable states of the S-type differential conductivity correspond to empty and filled states of bound excitons, respectively. The relationship between the current voltage characteristic and the bound-exciton population can be accounted for using a rate equation model for bound and free excitons. The consistency between the theoretical and experimental results indicates that bound excitons, despite their neutral-charged states, contribute to the current bistability in silicon p n junction diodes.</dcterms:abstract> </rdf:Description> </rdf:RDF>

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