Analysis of electrically active defects in silicon for solar cells
Analysis of electrically active defects in silicon for solar cells
Date
2008
Authors
Roth, Thomas
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Title in another language
Analyse von elektrisch aktiven Defekten in Silicium für Solarzellen
Publication type
Dissertation
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Published in
Abstract
The present work was concerned with the analysis of electrically active defects in silicon for solar cells. Analysis of such defects was performed using the two different characterization techniques deep-level transient spectroscopy and lifetime spectroscopy. The challenge of the present work was the in-depth comparison of the different measurement and evaluation techniques as well as the experimental use of these techniques for accessing the defect parameters of various impurities in silicon material.
Summary in another language
Die vorliegende Arbeit behandelte die Analyse von elektrisch aktiven Defekten in Silicium für Solarzellen. Diese Analyse wurde durchgeführt mit den Methoden der Deep-level transient spectroscopy und der Lebensdauerspektroskopie. Das Ziel dieser Arbeit war sowohl der ausführliche Vergleich dieser unterschiedlichen Mess- und Auswertemethoden, als auch das experimentelle Anwenden dieser Methoden, um die Defektparameter verschiedener metallischer Verunreinigungen zu bestimmen.
Subject (DDC)
530 Physics
Keywords
silicon,carrier lifetime,photoluminescence,photovoltaic,defect
Conference
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ISO 690
ROTH, Thomas, 2008. Analysis of electrically active defects in silicon for solar cells [Dissertation]. Konstanz: University of KonstanzBibTex
@phdthesis{Roth2008Analy-5029,
year={2008},
title={Analysis of electrically active defects in silicon for solar cells},
author={Roth, Thomas},
address={Konstanz},
school={Universität Konstanz}
}
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Examination date of dissertation
December 19, 2008