Analysis of electrically active defects in silicon for solar cells
| Type of Publication: | Dissertation |
| URI (citable link): | http://nbn-resolving.de/urn:nbn:de:bsz:352-opus-72668 |
| Author: | Roth, Thomas |
| Year of publication: | 2008 |
| Title in another language: | Analyse von elektrisch aktiven Defekten in Silicium für Solarzellen |
| Summary: |
The present work was concerned with the analysis of electrically active defects in silicon for solar cells. Analysis of such defects was performed using the two different characterization techniques deep-level transient spectroscopy and lifetime spectroscopy. The challenge of the present work was the in-depth comparison of the different measurement and evaluation techniques as well as the experimental use of these techniques for accessing the defect parameters of various impurities in silicon material.
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| Summary in another language: |
Die vorliegende Arbeit behandelte die Analyse von elektrisch aktiven Defekten in Silicium für Solarzellen. Diese Analyse wurde durchgeführt mit den Methoden der Deep-level transient spectroscopy und der Lebensdauerspektroskopie. Das Ziel dieser Arbeit war sowohl der ausführliche Vergleich dieser unterschiedlichen Mess- und Auswertemethoden, als auch das experimentelle Anwenden dieser Methoden, um die Defektparameter verschiedener metallischer Verunreinigungen zu bestimmen.
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| Examination date (for dissertations): | Dec 19, 2008 |
| Dissertation note: | Doctoral dissertation, University of Konstanz |
| PACS Classification: | 80; 81.05.Cy; 81.05.-t; 81 |
| Subject (DDC): | 530 Physics |
| Controlled Keywords (GND): | Silicium, Ladungsträger, Lebensdauer, Photolumineszenz, Photovoltaik, Defekt |
| Keywords: | silicon, carrier lifetime, photoluminescence, photovoltaic, defect |
| Link to License: | Terms of use |
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ROTH, Thomas, 2008. Analysis of electrically active defects in silicon for solar cells [Dissertation]. Konstanz: University of Konstanz
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