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Type of Publication: | Dissertation |
URI (citable link): | http://nbn-resolving.de/urn:nbn:de:bsz:352-opus-72668 |
Author: | Roth, Thomas |
Year of publication: | 2008 |
Title in another language: | Analyse von elektrisch aktiven Defekten in Silicium für Solarzellen |
Summary: |
The present work was concerned with the analysis of electrically active defects in silicon for solar cells. Analysis of such defects was performed using the two different characterization techniques deep-level transient spectroscopy and lifetime spectroscopy. The challenge of the present work was the in-depth comparison of the different measurement and evaluation techniques as well as the experimental use of these techniques for accessing the defect parameters of various impurities in silicon material.
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Summary in another language: |
Die vorliegende Arbeit behandelte die Analyse von elektrisch aktiven Defekten in Silicium für Solarzellen. Diese Analyse wurde durchgeführt mit den Methoden der Deep-level transient spectroscopy und der Lebensdauerspektroskopie. Das Ziel dieser Arbeit war sowohl der ausführliche Vergleich dieser unterschiedlichen Mess- und Auswertemethoden, als auch das experimentelle Anwenden dieser Methoden, um die Defektparameter verschiedener metallischer Verunreinigungen zu bestimmen.
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Examination date (for dissertations): | Dec 19, 2008 |
Dissertation note: | Doctoral dissertation, University of Konstanz |
PACS Classification: | 80; 81.05.Cy; 81.05.-t; 81 |
Subject (DDC): | 530 Physics |
Controlled Keywords (GND): | Silicium, Ladungsträger, Lebensdauer, Photolumineszenz, Photovoltaik, Defekt |
Keywords: | silicon, carrier lifetime, photoluminescence, photovoltaic, defect |
Link to License: | In Copyright |
ROTH, Thomas, 2008. Analysis of electrically active defects in silicon for solar cells [Dissertation]. Konstanz: University of Konstanz
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PhD_RothT_05_01_2009.pdf | 826 |