Analysis of electrically active defects in silicon for solar cells
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| Type of Publication: | Dissertation |
| URI (citable link): | http://nbn-resolving.de/urn:nbn:de:bsz:352-opus-72668 |
| Author: | Roth, Thomas |
| Year of publication: | 2008 |
| Title in another language: | Analyse von elektrisch aktiven Defekten in Silicium für Solarzellen |
| Summary: |
The present work was concerned with the analysis of electrically active defects in silicon for solar cells. Analysis of such defects was performed using the two different characterization techniques deep-level transient spectroscopy and lifetime spectroscopy. The challenge of the present work was the in-depth comparison of the different measurement and evaluation techniques as well as the experimental use of these techniques for accessing the defect parameters of various impurities in silicon material.
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| Summary in another language: |
Die vorliegende Arbeit behandelte die Analyse von elektrisch aktiven Defekten in Silicium für Solarzellen. Diese Analyse wurde durchgeführt mit den Methoden der Deep-level transient spectroscopy und der Lebensdauerspektroskopie. Das Ziel dieser Arbeit war sowohl der ausführliche Vergleich dieser unterschiedlichen Mess- und Auswertemethoden, als auch das experimentelle Anwenden dieser Methoden, um die Defektparameter verschiedener metallischer Verunreinigungen zu bestimmen.
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| Examination date (for dissertations): | Dec 19, 2008 |
| Dissertation note: | Doctoral dissertation, University of Konstanz |
| PACS Classification: | 80; 81.05.Cy; 81.05.-t; 81 |
| Subject (DDC): | 530 Physics |
| Controlled Keywords (GND): | Silicium, Ladungsträger, Lebensdauer, Photolumineszenz, Photovoltaik, Defekt |
| Keywords: | silicon, carrier lifetime, photoluminescence, photovoltaic, defect |
| Link to License: | In Copyright |
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ROTH, Thomas, 2008. Analysis of electrically active defects in silicon for solar cells [Dissertation]. Konstanz: University of Konstanz
@phdthesis{Roth2008Analy-5029, title={Analysis of electrically active defects in silicon for solar cells}, year={2008}, author={Roth, Thomas}, address={Konstanz}, school={Universität Konstanz} }
<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/5029"> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/5029"/> <dc:rights>terms-of-use</dc:rights> <dcterms:title>Analysis of electrically active defects in silicon for solar cells</dcterms:title> <dcterms:alternative>Analyse von elektrisch aktiven Defekten in Silicium für Solarzellen</dcterms:alternative> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:creator>Roth, Thomas</dc:creator> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/5029/1/PhD_RothT_05_01_2009.pdf"/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:contributor>Roth, Thomas</dc:contributor> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/5029/1/PhD_RothT_05_01_2009.pdf"/> <dc:language>eng</dc:language> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:52:36Z</dc:date> <dcterms:abstract xml:lang="eng">The present work was concerned with the analysis of electrically active defects in silicon for solar cells. Analysis of such defects was performed using the two different characterization techniques deep-level transient spectroscopy and lifetime spectroscopy. The challenge of the present work was the in-depth comparison of the different measurement and evaluation techniques as well as the experimental use of these techniques for accessing the defect parameters of various impurities in silicon material.</dcterms:abstract> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:52:36Z</dcterms:available> <dc:format>application/pdf</dc:format> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/> <dcterms:issued>2008</dcterms:issued> </rdf:Description> </rdf:RDF>
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