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H-Passivierung von multikristallinem Silizium : Untersuchung der Bindungsenergien von Wasserstoff an Defekten

H-Passivierung von multikristallinem Silizium : Untersuchung der Bindungsenergien von Wasserstoff an Defekten

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Prüfsumme: MD5:8a0445738ddec8536cd0dc21df07a51f

KARZEL, Philipp, 2008. H-Passivierung von multikristallinem Silizium : Untersuchung der Bindungsenergien von Wasserstoff an Defekten [Master thesis]

@mastersthesis{Karzel2008HPass-5027, title={H-Passivierung von multikristallinem Silizium : Untersuchung der Bindungsenergien von Wasserstoff an Defekten}, year={2008}, author={Karzel, Philipp} }

Karzel, Philipp The diploma thesis "H-Passivation of multicrystalline Silicon - Analysis of Hydrogen bond energies at defect sites" was completed in November 2008 at the Photovoltaic division of the University of Konstanz. It presents a new method analyze the bond energies of hydrogen at defect sites in multicrystalline silicon in a spatially resolved way. The method is based upon out diffusion of hydrogen during exactly controlled temperature steps at increasing given temperatures. After each temperature step the minority charge carrier lifetime of the examined sample is measured spatially resolved by the µ-PCD-method. From these lifetime maps the bond energies of hydrogen can be determined for the whole sample area.<br />In further experiments we hope to be able to draw conclusions from the defect-typical bond energies concerning the defect distribution. On long term this could be an elegant method to determine distributions of defect types in silicon wafers. Karzel, Philipp H-Passivation of multicrystalline SiliconAnalysis of Hydrogen bond energies at defect sites 2011-03-24T14:52:35Z 2011-03-24T14:52:35Z H-Passivierung von multikristallinem Silizium : Untersuchung der Bindungsenergien von Wasserstoff an Defekten deu application/pdf deposit-license 2008

Dateiabrufe seit 01.10.2014 (Informationen über die Zugriffsstatistik)

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