Low temperature formation of Si(111)-(2n+1) x (2n+1) surface reconstructions

Fonin, Mikhail; Choi, Jin M.; May, Ulrich; Hauch, Jan O.; Rüdiger, Ulrich; Güntherodt, Gernot

Low temperature formation of Si(111)-(2n+1) x (2n+1) surface reconstructions

Dateien

Low_temperature_formation_of_Si.pdfGröße: 267 KBDownloads: 308

Datum

2002

Autor:innen

Fonin, Mikhail

Choi, Jin M.

May, Ulrich

Hauch, Jan O.

Rüdiger, Ulrich

Güntherodt, Gernot

Publikationstyp

Zeitschriftenartikel

unikn.publication.listelement.citation.prefix.version.undefined

Surface Science. 2002, 511, pp. 312-318. Available under: doi: 10.1016/S0039-6028(02)01514-5

Zusammenfassung

Scanning tunneling microscopy was used to study the surface morphology changes of the H-terminated Si(1 1 1)surface during Ag deposition at elevated temperatures. Flat H-terminated Si(1 1 1) surfaces were prepared by NH4F etching. Domains of various dimer-adatom-stacking-fault superstructures, such as 3 x 3, 5 x 5, 7 x 7, and 9 x 9 were observed on the Si(1 1 1) surface after hot deposition of 1 ML Ag at 550 °C This phenomenon was compared with hydrogen thermal desorption experiments, which did not show the formation of metastable surface superstructures at temperatures near 550 °C. All metastable superstructures obtained after hot Ag deposition at 550 °C were found to convert into the 7 x 7 reconstruction after annealing at 600 °C.

Fachgebiet (DDC)

530 Physik

Schlagwörter

Silicon, Surface relaxation and reconstruction, Surface structure, morphology, roughness

Zitieren

ISO 690

FONIN, Mikhail, Jin M. CHOI, Ulrich MAY, Jan O. HAUCH, Ulrich RÜDIGER, Gernot GÜNTHERODT, 2002. Low temperature formation of Si(111)-(2n+1) x (2n+1) surface reconstructions. In: Surface Science. 2002, 511, pp. 312-318. Available under: doi: 10.1016/S0039-6028(02)01514-5

BibTex

@article{Fonin2002tempe-5013,
  year={2002},
  doi={10.1016/S0039-6028(02)01514-5},
  title={Low temperature formation of Si(111)-(2n+1) x (2n+1) surface reconstructions},
  volume={511},
  journal={Surface Science},
  pages={312--318},
  author={Fonin, Mikhail and Choi, Jin M. and May, Ulrich and Hauch, Jan O. and Rüdiger, Ulrich and Güntherodt, Gernot}
}

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