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Understanding coupled oxide growth and phosphorus diffusion in POCl3 deposition for control of phosphorus emitter diffusion

Understanding coupled oxide growth and phosphorus diffusion in POCl3 deposition for control of phosphorus emitter diffusion

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CHEN, Renyu, Hannes WAGNER, Amir DASTGHEIB-SHIRAZI, Michael KESSLER, Zihua ZHU, Pietro P. ALTERMATT, Scott T. DUNHAM, 2012. Understanding coupled oxide growth and phosphorus diffusion in POCl3 deposition for control of phosphorus emitter diffusion. 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC). Austin, Texas, Jun 3, 2012 - Jun 8, 2012. In: 2012 38th IEEE Photovoltaic Specialists Conference. IEEE, pp. 000213-000216. ISBN 978-1-4673-0064-3. Available under: doi: 10.1109/PVSC.2012.6317603

@inproceedings{Chen2012Under-50021, title={Understanding coupled oxide growth and phosphorus diffusion in POCl3 deposition for control of phosphorus emitter diffusion}, year={2012}, doi={10.1109/PVSC.2012.6317603}, isbn={978-1-4673-0064-3}, publisher={IEEE}, booktitle={2012 38th IEEE Photovoltaic Specialists Conference}, pages={000213--000216}, author={Chen, Renyu and Wagner, Hannes and Dastgheib-Shirazi, Amir and Kessler, Michael and Zhu, Zihua and Altermatt, Pietro P. and Dunham, Scott T.} }

2020-06-25T12:46:54Z Wagner, Hannes Understanding coupled oxide growth and phosphorus diffusion in POCl3 deposition for control of phosphorus emitter diffusion Chen, Renyu 2020-06-25T12:46:54Z Dunham, Scott T. 2012 Zhu, Zihua Effective control of diffused phosphorus profiles in crystalline silicon requires detailed understanding of the doping process. We analyze concentration profiles within the deposited phosphosilicate glass (PSG) for a range of POCl<sub>3</sub> conditions and develop a model to account for the experimentally observed time dependence of PSG thickness and dose of phosphorus in Si. A simple linear-parabolic model cannot fully explain the kinetics of thickness and dose; while an improved growth model including oxygen dependence and dose saturation gives better fits to the experiments. We further couple the growth model with phosphorus diffusion and deactivation models in silicon and provide full modeling of the POCl<sub>3</sub> doping process. Dunham, Scott T. Chen, Renyu Altermatt, Pietro P. Altermatt, Pietro P. Kessler, Michael Zhu, Zihua Kessler, Michael Wagner, Hannes Dastgheib-Shirazi, Amir Dastgheib-Shirazi, Amir eng

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