KOPS - Das Institutionelle Repositorium der Universität Konstanz

Bright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor devices

Bright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor devices

Zitieren

Dateien zu dieser Ressource

Prüfsumme: MD5:b7f2932e1ca0b29ada6fadfcd0210f3f

SUN, Jiaming, Wolfgang SKORUPA, Thomas DEKORSY, Manfred HELM, Lars REBOHLE, Thoralf GEBEL, 2005. Bright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor devices. In: Journal of Applied Physics. 97, 123513. Available under: doi: 10.1063/1.1935766

@article{Sun2005Brigh-4997, title={Bright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor devices}, year={2005}, doi={10.1063/1.1935766}, volume={97}, journal={Journal of Applied Physics}, author={Sun, Jiaming and Skorupa, Wolfgang and Dekorsy, Thomas and Helm, Manfred and Rebohle, Lars and Gebel, Thoralf}, note={Article Number: 123513} }

<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/4997"> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/4997/1/Bright_green_electroluminescence_from_Tb_3_in_silicon_metal_oxide_semiconductor_devices.pdf"/> <dc:creator>Skorupa, Wolfgang</dc:creator> <dc:contributor>Skorupa, Wolfgang</dc:contributor> <dc:contributor>Gebel, Thoralf</dc:contributor> <dc:contributor>Rebohle, Lars</dc:contributor> <dc:contributor>Sun, Jiaming</dc:contributor> <dc:creator>Sun, Jiaming</dc:creator> <dc:language>eng</dc:language> <dcterms:issued>2005</dcterms:issued> <dc:creator>Helm, Manfred</dc:creator> <dc:contributor>Helm, Manfred</dc:contributor> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dcterms:title>Bright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor devices</dcterms:title> <dc:creator>Dekorsy, Thomas</dc:creator> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/4997"/> <dcterms:rights rdf:resource="https://creativecommons.org/licenses/by-nc-nd/2.0/legalcode"/> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:rights>deposit-license</dc:rights> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:52:23Z</dc:date> <dc:creator>Rebohle, Lars</dc:creator> <dc:contributor>Dekorsy, Thomas</dc:contributor> <dc:creator>Gebel, Thoralf</dc:creator> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/4997/1/Bright_green_electroluminescence_from_Tb_3_in_silicon_metal_oxide_semiconductor_devices.pdf"/> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:52:23Z</dcterms:available> <dc:format>application/pdf</dc:format> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dcterms:bibliographicCitation>First publ. in: Journal of Applied Physics 97 (2005), 123513</dcterms:bibliographicCitation> <dcterms:abstract xml:lang="eng">Bright green electroluminescence with luminance up to 2800 cd/m² is reported from indium-tin-oxide/SiO2:Tb/Si metal-oxide-semiconductor devices. The SiO2:Tb3+ gate oxide was prepared by thermal oxidation followed by Tb+ implantation. Electroluminescence and photoluminescence properties were studied with variations of the Tb3+ ion concentration and the annealing temperature. The optimized device shows a high external quantum efficiency of 16% and a luminous efficiency of 2.1 lm/W. The excitation processes of the strong green electroluminescence are attributed to the impact excitation of the Tb3+ luminescent centers by hot electrons and the subsequent crossrelaxation from 5D3 to 5D4 energy levels. Light-emitting devices with micrometer size fabricated by the standard metal-oxide-semiconductor technology are demonstrated.</dcterms:abstract> </rdf:Description> </rdf:RDF>

Dateiabrufe seit 01.10.2014 (Informationen über die Zugriffsstatistik)

Bright_green_electroluminescence_from_Tb_3_in_silicon_metal_oxide_semiconductor_devices.pdf 253

Das Dokument erscheint in:

deposit-license Solange nicht anders angezeigt, wird die Lizenz wie folgt beschrieben: deposit-license

KOPS Suche


Stöbern

Mein Benutzerkonto