Laser-induced Particle Removal from Silicon Wafers

Leiderer, Paul; Boneberg, Johannes; Dobler, Volker; Mosbacher, Mario; Münzer, Hans-Joachim; Chaoui, Nouari; Siegel, Jan Philip; Solis Cespedes, Francisco Javier; Afonso Rodriguez, Carmen Nieves; Fourrier, T.; Schrems, Gernot; Bäuerle, Dieter

Laser-induced Particle Removal from Silicon Wafers

Dateien

272_procSPIE_2000.pdfGröße: 2.78 MBDownloads: 518

Datum

2000

Autor:innen

Leiderer, Paul

Boneberg, Johannes

Dobler, Volker

Mosbacher, Mario

Münzer, Hans-Joachim

Chaoui, Nouari

Siegel, Jan Philip

Solis Cespedes, Francisco Javier

Afonso Rodriguez, Carmen Nieves

Fourrier, T.

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Open Access-Veröffentlichung

Open Access Green

Sammlungen

Physik

Publikationstyp

Beitrag zu einem Konferenzband

Publikationsstatus

Published

Erschienen in

Proceedings of SPIE. SPIE, 2000, pp. 249-259. eISSN 0277-786X. Available under: doi: 10.1117/12.407353

Zusammenfassung

The cleaning of silicon surfaces from submicron dust particles has been studied by means of the Steam Laser Cleaning (SLC) process and compared to Dry Laser Cleaning (DLC) which is used nowadays in many applications. For SLC a thin liquid layer (e.g. a water-alcohol mixture) is condensed onto the substrate, and is subsequently evaporated by irradiating the surface with a short laser pulse. The DLC process, on the other hand, only relies on the laser pulse, without application of a vapor jet. We have systematically investigated the efficiency of these two processes for the removal of well-characterized polymer, silica and alumina particles of various sizes down to 60 nm in diameter, and have also studied the influence of light wavelength and laser pulse duration for nanosecond and picosecond pulses. The results demonstrate that for the gentle cleaning of silicon wafers SLC is a very efficient method and is superior to DLC. An effect which so far has only rarely been taken into account for laser cleaning is the field enhancement under the particles, which can give rise to serious surface damage, in particular when cleaning pulses in the picosecond and femtosecond range in the DLC are applied.

Fachgebiet (DDC)

530 Physik

Schlagwörter

Laser cleaning, particle removal, silicon wafers, field enhancement, surface damage

Konferenz

High-Power Laser Ablation III, Santa Fe, NM, USA

Zitieren

ISO 690

LEIDERER, Paul, Johannes BONEBERG, Volker DOBLER, Mario MOSBACHER, Hans-Joachim MÜNZER, Nouari CHAOUI, Jan Philip SIEGEL, Francisco Javier SOLIS CESPEDES, Carmen Nieves AFONSO RODRIGUEZ, T. FOURRIER, Gernot SCHREMS, Dieter BÄUERLE, 2000. Laser-induced Particle Removal from Silicon Wafers. High-Power Laser Ablation III. Santa Fe, NM, USA. In: Proceedings of SPIE. SPIE, 2000, pp. 249-259. eISSN 0277-786X. Available under: doi: 10.1117/12.407353

BibTex

@inproceedings{Leiderer2000Laser-4968,
  year={2000},
  doi={10.1117/12.407353},
  title={Laser-induced Particle Removal from Silicon Wafers},
  publisher={SPIE},
  booktitle={Proceedings of SPIE},
  pages={249--259},
  author={Leiderer, Paul and Boneberg, Johannes and Dobler, Volker and Mosbacher, Mario and Münzer, Hans-Joachim and Chaoui, Nouari and Siegel, Jan Philip and Solis Cespedes, Francisco Javier and Afonso Rodriguez, Carmen Nieves and Fourrier, T. and Schrems, Gernot and Bäuerle, Dieter}
}

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Universitätsbibliographie

Ja